FR2760566B1 - SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF - Google Patents

SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF

Info

Publication number
FR2760566B1
FR2760566B1 FR9712478A FR9712478A FR2760566B1 FR 2760566 B1 FR2760566 B1 FR 2760566B1 FR 9712478 A FR9712478 A FR 9712478A FR 9712478 A FR9712478 A FR 9712478A FR 2760566 B1 FR2760566 B1 FR 2760566B1
Authority
FR
France
Prior art keywords
chip
production
semiconductor device
multiple types
transistors formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9712478A
Other languages
French (fr)
Other versions
FR2760566A1 (en
Inventor
Shuichi Ueno
Yoshinori Okumura
Shigenobu Maeda
Shigeto Maegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2760566A1 publication Critical patent/FR2760566A1/en
Application granted granted Critical
Publication of FR2760566B1 publication Critical patent/FR2760566B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9712478A 1997-03-05 1997-10-07 SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF Expired - Fee Related FR2760566B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9050312A JPH10247725A (en) 1997-03-05 1997-03-05 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
FR2760566A1 FR2760566A1 (en) 1998-09-11
FR2760566B1 true FR2760566B1 (en) 2002-08-16

Family

ID=12855386

Family Applications (2)

Application Number Title Priority Date Filing Date
FR9712478A Expired - Fee Related FR2760566B1 (en) 1997-03-05 1997-10-07 SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF
FR9808607A Expired - Fee Related FR2766617B1 (en) 1997-03-05 1998-07-06 SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR9808607A Expired - Fee Related FR2766617B1 (en) 1997-03-05 1998-07-06 SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF

Country Status (7)

Country Link
US (1) US6492690B2 (en)
JP (1) JPH10247725A (en)
KR (1) KR19980079317A (en)
CN (1) CN1162912C (en)
DE (1) DE19745249A1 (en)
FR (2) FR2760566B1 (en)
TW (1) TW344899B (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4199338B2 (en) 1998-10-02 2008-12-17 富士通マイクロエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
KR100513445B1 (en) * 1999-09-10 2005-09-07 삼성전자주식회사 Method for manufacturing semiconductor device
JP2001110908A (en) * 1999-10-06 2001-04-20 Nec Corp Semiconductor device and its manufacturing method
JP4823408B2 (en) * 2000-06-08 2011-11-24 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
US6686298B1 (en) 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6649543B1 (en) 2000-06-22 2003-11-18 Micron Technology, Inc. Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
US6833329B1 (en) * 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6660657B1 (en) 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
JP2002368144A (en) * 2001-06-13 2002-12-20 Hitachi Ltd Non-volatile semiconductor memory device and production method therefor
DE10209334A1 (en) * 2002-03-02 2003-10-09 Infineon Technologies Ag Filling process for troughs on a semiconductor wafer
US7112857B2 (en) * 2004-07-06 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
JP2006049365A (en) * 2004-07-30 2006-02-16 Nec Electronics Corp Semiconductor device
JP2006059880A (en) * 2004-08-17 2006-03-02 Fujitsu Ltd Semiconductor device and its manufacturing method
KR100680488B1 (en) * 2005-01-13 2007-02-08 주식회사 하이닉스반도체 Method for fabricating flash memory device
US20060237778A1 (en) * 2005-04-22 2006-10-26 Mu-Yi Liu Non-volatile semiconductor memory cell and method of manufacturing the same
US7485528B2 (en) 2006-07-14 2009-02-03 Micron Technology, Inc. Method of forming memory devices by performing halogen ion implantation and diffusion processes
US8159895B2 (en) 2006-08-17 2012-04-17 Broadcom Corporation Method and system for split threshold voltage programmable bitcells
JP4421629B2 (en) * 2007-04-25 2010-02-24 株式会社東芝 Manufacturing method of semiconductor device
US7718496B2 (en) 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
WO2009061834A1 (en) * 2007-11-05 2009-05-14 Contour Semiconductor, Inc. Low-cost, high-density rectifier matrix memory
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5778900B2 (en) * 2010-08-20 2015-09-16 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US9224475B2 (en) * 2012-08-23 2015-12-29 Sandisk Technologies Inc. Structures and methods for making NAND flash memory
JP5564588B2 (en) * 2013-02-07 2014-07-30 ルネサスエレクトロニクス株式会社 Semiconductor device
US9613971B2 (en) 2015-07-24 2017-04-04 Sandisk Technologies Llc Select gates with central open areas
US9443862B1 (en) 2015-07-24 2016-09-13 Sandisk Technologies Llc Select gates with select gate dielectric first
CN107026192B (en) * 2016-02-02 2020-05-29 中芯国际集成电路制造(上海)有限公司 Method for manufacturing semiconductor device
CN116779615B (en) * 2023-08-23 2023-11-07 合肥晶合集成电路股份有限公司 Integrated semiconductor device and manufacturing method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249968A (en) * 1978-12-29 1981-02-10 International Business Machines Corporation Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4745079A (en) * 1987-03-30 1988-05-17 Motorola, Inc. Method for fabricating MOS transistors having gates with different work functions
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory
US4914046A (en) * 1989-02-03 1990-04-03 Motorola, Inc. Polycrystalline silicon device electrode and method
US5021356A (en) 1989-08-24 1991-06-04 Delco Electronics Corporation Method of making MOSFET depletion device
DE69006978T2 (en) * 1989-08-24 1994-06-09 Delco Electronics Corp MOSFET depletion arrangement.
JP2978345B2 (en) * 1992-11-26 1999-11-15 三菱電機株式会社 Method for manufacturing semiconductor device
US5340764A (en) * 1993-02-19 1994-08-23 Atmel Corporation Integration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layer
JPH06342881A (en) 1993-06-02 1994-12-13 Toshiba Corp Semiconductor device and manufacture thereof
EP0639856A1 (en) * 1993-08-20 1995-02-22 Texas Instruments Incorporated Method of doping a polysilicon layer and semiconductor device obtained
JPH07263680A (en) * 1994-03-24 1995-10-13 Hitachi Ltd Manufacture of semiconductor device
JP3444687B2 (en) * 1995-03-13 2003-09-08 三菱電機株式会社 Nonvolatile semiconductor memory device
US5480830A (en) * 1995-04-04 1996-01-02 Taiwan Semiconductor Manufacturing Company Ltd. Method of making depleted gate transistor for high voltage operation
JP3243151B2 (en) * 1995-06-01 2002-01-07 東芝マイクロエレクトロニクス株式会社 Method for manufacturing semiconductor device
EP0751560B1 (en) * 1995-06-30 2002-11-27 STMicroelectronics S.r.l. Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC
US5753958A (en) * 1995-10-16 1998-05-19 Sun Microsystems, Inc. Back-biasing in asymmetric MOS devices
US5767558A (en) * 1996-05-10 1998-06-16 Integrated Device Technology, Inc. Structures for preventing gate oxide degradation

Also Published As

Publication number Publication date
TW344899B (en) 1998-11-11
KR19980079317A (en) 1998-11-25
CN1162912C (en) 2004-08-18
FR2766617A1 (en) 1999-01-29
DE19745249A1 (en) 1998-09-10
CN1192586A (en) 1998-09-09
US20020130374A1 (en) 2002-09-19
FR2766617B1 (en) 2003-08-01
US6492690B2 (en) 2002-12-10
FR2760566A1 (en) 1998-09-11
JPH10247725A (en) 1998-09-14

Similar Documents

Publication Publication Date Title
FR2760566B1 (en) SEMICONDUCTOR DEVICE HAVING MULTIPLE TYPES OF TRANSISTORS FORMED IN A CHIP AND METHOD FOR THE PRODUCTION THEREOF
DE69730377D1 (en) Permanent semiconductor memory cell and its manufacturing process
FR2798223B1 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
DE69627252D1 (en) Semiconductor substrate and manufacturing process
DE69935095D1 (en) Semiconductor component and its manufacturing method
DE60045088D1 (en) Semiconductor device and its manufacturing method
FR2809867B1 (en) FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE
DE69635397D1 (en) Semiconductor device with chip dimensions and manufacturing method
DE69430513D1 (en) Resin-molded semiconductor device and its manufacturing process
FR2812764B1 (en) METHOD FOR MANUFACTURING SUBSTRATE OF SUBSTRATE-SELF-INSULATION OR SUBSTRATE-ON-VACUUM AND DEVICE OBTAINED
FR2788629B1 (en) TRANSISTOR MIS AND METHOD FOR FABRICATING SUCH A TRANSISTOR ON A SEMICONDUCTOR SUBSTRATE
FR2586510B1 (en) SEMICONDUCTOR MODULE HAVING HIGH COOLING ABILITY AND METHOD FOR THE PRODUCTION THEREOF
IT1282087B1 (en) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
FR2774214B1 (en) PROCESS FOR PRODUCING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATOR AND IN PARTICULAR SiCOI
DE69831903D1 (en) Semiconductor device with capacitor and its production method
FR2768836B1 (en) IDENTIFICATION DEVICE AND METHOD FOR MANUFACTURING THE ASSOCIATED DEVICE
FR2787546B1 (en) VALVE ELEMENT AND MANUFACTURING METHOD THEREOF
FR2732811B1 (en) SEMICONDUCTOR MEMORY WITH REDUCED SURFACE CHIP
FR2795838B1 (en) METHOD FOR SECURING THE PROCESSING OF SENSITIVE INFORMATION IN A MONOLITHIC SECURITY MODULE, AND RELATED SECURITY MODULE
FR2800147B1 (en) STATIC METAL JOINT AND MANUFACTURING METHOD
FR2776796B1 (en) METHOD FOR MANUFACTURING CHIP CARDS
KR970004011A (en) Semiconductor memory device and manufacturing method
FR2818578B1 (en) METHOD FOR MANUFACTURING HONEYCOMB STRUCTURES AND TOOLS FOR SUCH MANUFACTURE
FR2764733B1 (en) HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
FR2793331B1 (en) METHOD FOR MANUFACTURING A MICROCIRCUIT CARD

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100630