FR2764733B1 - HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Google Patents

HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Info

Publication number
FR2764733B1
FR2764733B1 FR9707237A FR9707237A FR2764733B1 FR 2764733 B1 FR2764733 B1 FR 2764733B1 FR 9707237 A FR9707237 A FR 9707237A FR 9707237 A FR9707237 A FR 9707237A FR 2764733 B1 FR2764733 B1 FR 2764733B1
Authority
FR
France
Prior art keywords
autoalignized
quasi
manufacturing
same
hyperfrequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9707237A
Other languages
French (fr)
Other versions
FR2764733A1 (en
Inventor
Alain Chantre
Port De Poncharra Jean Du
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9707237A priority Critical patent/FR2764733B1/en
Priority to DE69807877T priority patent/DE69807877D1/en
Priority to PCT/FR1998/001183 priority patent/WO1998057367A1/en
Priority to US09/445,425 priority patent/US6403437B1/en
Priority to EP98929532A priority patent/EP0990266B1/en
Publication of FR2764733A1 publication Critical patent/FR2764733A1/en
Application granted granted Critical
Publication of FR2764733B1 publication Critical patent/FR2764733B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR9707237A 1997-06-11 1997-06-11 HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME Expired - Fee Related FR2764733B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9707237A FR2764733B1 (en) 1997-06-11 1997-06-11 HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
DE69807877T DE69807877D1 (en) 1997-06-11 1998-06-10 MICROWAVE TRANSISTOR WITH ALMOST SELF-ADJUSTED STRUCTURE AND METHOD FOR PRODUCING IT
PCT/FR1998/001183 WO1998057367A1 (en) 1997-06-11 1998-06-10 Hyperfrequency transistor with quasi-aligned structure and method for making same
US09/445,425 US6403437B1 (en) 1997-06-11 1998-06-10 Method for making hyperfrequency transistor
EP98929532A EP0990266B1 (en) 1997-06-11 1998-06-10 Hyperfrequency transistor with quasi-aligned structure and method for making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9707237A FR2764733B1 (en) 1997-06-11 1997-06-11 HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Publications (2)

Publication Number Publication Date
FR2764733A1 FR2764733A1 (en) 1998-12-18
FR2764733B1 true FR2764733B1 (en) 2003-11-14

Family

ID=9507855

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9707237A Expired - Fee Related FR2764733B1 (en) 1997-06-11 1997-06-11 HYPERFREQUENCY TRANSISTOR WITH A QUASI-AUTOALIGNIZED STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Country Status (5)

Country Link
US (1) US6403437B1 (en)
EP (1) EP0990266B1 (en)
DE (1) DE69807877D1 (en)
FR (1) FR2764733B1 (en)
WO (1) WO1998057367A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2799048B1 (en) * 1999-09-23 2003-02-21 St Microelectronics Sa METHOD FOR MANUFACTURING A SELF-ALIGNED VERTICAL BIPOLAR TRANSISTOR
FR2805923B1 (en) * 2000-03-06 2002-05-24 St Microelectronics Sa PROCESS FOR MANUFACTURING A SELF-ALIGNED DOUBLE-POLYSILICON BIPOLAR TRANSISTOR
US6534372B1 (en) * 2000-11-22 2003-03-18 Newport Fab, Llc Method for fabricating a self-aligned emitter in a bipolar transistor
DE10205712A1 (en) * 2002-02-12 2003-08-28 Infineon Technologies Ag Polysilicon bipolar transistor and method of manufacturing the same
US6683366B1 (en) * 2002-06-04 2004-01-27 Newport Fab, Llc Bipolar transistor and related structure
US6759731B2 (en) 2002-06-05 2004-07-06 United Microelectronics Corp. Bipolar junction transistor and fabricating method
US20060160030A1 (en) * 2003-03-24 2006-07-20 Leibiger Steve M Single polisilicon emitter bipolar junction transistor processing technique using cumulative photo resist application and patterning
US7002221B2 (en) * 2003-08-29 2006-02-21 International Business Machines Corporation Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
US7288829B2 (en) * 2004-11-10 2007-10-30 International Business Machines Corporation Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
FR2883432B1 (en) 2005-03-18 2008-02-22 St Microelectronics Sa INTEGRABLE FREQUENCY TUNABLE FILTERING CIRCUIT COMPRISING A BAW RESONATOR SET
FR2904492A1 (en) 2006-07-28 2008-02-01 St Microelectronics Sa Filtering circuit for use in field of mobile telecommunication, has circuit generating two control values i.e. control voltages, that causes two band passes such that bandpass filtering is achieved within range of frequencies

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352624A (en) * 1992-01-23 1994-10-04 Sony Corporation SOI type semiconductor device and manufacturing method therefor
US5616508A (en) * 1995-01-09 1997-04-01 Texas Instruments Incorporated High speed bipolar transistor using a patterned etch stop and diffusion source
US5593905A (en) * 1995-02-23 1997-01-14 Texas Instruments Incorporated Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link

Also Published As

Publication number Publication date
FR2764733A1 (en) 1998-12-18
EP0990266A1 (en) 2000-04-05
DE69807877D1 (en) 2002-10-17
EP0990266B1 (en) 2002-09-11
WO1998057367A1 (en) 1998-12-17
US6403437B1 (en) 2002-06-11

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ST Notification of lapse

Effective date: 20140228