FR2741749B1 - Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant - Google Patents

Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant

Info

Publication number
FR2741749B1
FR2741749B1 FR9513917A FR9513917A FR2741749B1 FR 2741749 B1 FR2741749 B1 FR 2741749B1 FR 9513917 A FR9513917 A FR 9513917A FR 9513917 A FR9513917 A FR 9513917A FR 2741749 B1 FR2741749 B1 FR 2741749B1
Authority
FR
France
Prior art keywords
trenches
chemical polishing
lateral isolation
mechanical chemical
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9513917A
Other languages
English (en)
Other versions
FR2741749A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR9513917A priority Critical patent/FR2741749B1/fr
Priority to PCT/FR1996/001844 priority patent/WO1997019467A1/fr
Publication of FR2741749A1 publication Critical patent/FR2741749A1/fr
Application granted granted Critical
Publication of FR2741749B1 publication Critical patent/FR2741749B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR9513917A 1995-11-23 1995-11-23 Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant Expired - Fee Related FR2741749B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9513917A FR2741749B1 (fr) 1995-11-23 1995-11-23 Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant
PCT/FR1996/001844 WO1997019467A1 (fr) 1995-11-23 1996-11-21 Procede d'isolement lateral par tranchees utilisant une bicouche de protection en polysilicium sur nitrure de silicium pour l'aplanissement par polissage mecano-chimique de la couche d'isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9513917A FR2741749B1 (fr) 1995-11-23 1995-11-23 Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant

Publications (2)

Publication Number Publication Date
FR2741749A1 FR2741749A1 (fr) 1997-05-30
FR2741749B1 true FR2741749B1 (fr) 1998-02-06

Family

ID=9484847

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9513917A Expired - Fee Related FR2741749B1 (fr) 1995-11-23 1995-11-23 Procede d'isolement lateral par tranchees utilisant une couche sacrificielle pour l'aplanissement par polissage mecano-chimique de la couche d'isolant

Country Status (1)

Country Link
FR (1) FR2741749B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5094972A (en) * 1990-06-14 1992-03-10 National Semiconductor Corp. Means of planarizing integrated circuits with fully recessed isolation dielectric
US5445996A (en) * 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5318663A (en) * 1992-12-23 1994-06-07 International Business Machines Corporation Method for thinning SOI films having improved thickness uniformity

Also Published As

Publication number Publication date
FR2741749A1 (fr) 1997-05-30

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20120731