FR2739493B1 - POWER MOSFET AND MANUFACTURING METHOD THEREOF - Google Patents
POWER MOSFET AND MANUFACTURING METHOD THEREOFInfo
- Publication number
- FR2739493B1 FR2739493B1 FR9611709A FR9611709A FR2739493B1 FR 2739493 B1 FR2739493 B1 FR 2739493B1 FR 9611709 A FR9611709 A FR 9611709A FR 9611709 A FR9611709 A FR 9611709A FR 2739493 B1 FR2739493 B1 FR 2739493B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- power mosfet
- mosfet
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25374795 | 1995-09-29 | ||
JP25374895A JP3879129B2 (en) | 1995-09-29 | 1995-09-29 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2739493A1 FR2739493A1 (en) | 1997-04-04 |
FR2739493B1 true FR2739493B1 (en) | 2000-07-28 |
Family
ID=26541375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9611709A Expired - Lifetime FR2739493B1 (en) | 1995-09-29 | 1996-09-26 | POWER MOSFET AND MANUFACTURING METHOD THEREOF |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE19640443B4 (en) |
FR (1) | FR2739493B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005059035B4 (en) * | 2005-12-10 | 2007-11-08 | X-Fab Semiconductor Foundries Ag | Isolation trench structures for high voltages |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028271A (en) * | 1983-07-26 | 1985-02-13 | Nissan Motor Co Ltd | Vertical type mosfet |
JPS6212167A (en) * | 1985-07-10 | 1987-01-21 | Tdk Corp | Manufacture of vertical type semiconductor device with groove section |
US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
EP0550770B1 (en) * | 1991-07-26 | 1997-11-12 | Denso Corporation | Method of producing vertical mosfets |
JP3396553B2 (en) * | 1994-02-04 | 2003-04-14 | 三菱電機株式会社 | Semiconductor device manufacturing method and semiconductor device |
-
1996
- 1996-09-26 FR FR9611709A patent/FR2739493B1/en not_active Expired - Lifetime
- 1996-09-30 DE DE1996140443 patent/DE19640443B4/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19640443A1 (en) | 1997-04-03 |
FR2739493A1 (en) | 1997-04-04 |
DE19640443B4 (en) | 2005-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2745584B1 (en) | LUMINOPHORE AND MANUFACTURING METHOD THEREOF | |
FR2775123B1 (en) | THERMOELECTRIC MODULE AND MANUFACTURING METHOD THEREOF | |
DE59608735D1 (en) | OPTOELECTRONIC CONVERTER AND MANUFACTURING METHOD | |
DE69602483D1 (en) | Power converter and manufacturing process therefor | |
FR2746018B1 (en) | ELECTRODES ASSEMBLY AND MANUFACTURING METHOD THEREOF | |
FR2750253B1 (en) | INTEGRATED ELECTRO-OPTICAL MODULE AND ITS MANUFACTURING METHOD | |
KR950034612A (en) | Semiconductor Structure and Manufacturing Method Thereof | |
DE69625119D1 (en) | Power plant | |
DE69633214D1 (en) | Manufacturing method of a power semiconductor device and lead frame | |
DE69827028D1 (en) | INTELLIGENT POWER DISTRIBUTION SYSTEM AND ITS MANUFACTURING METHOD | |
FR2745595B1 (en) | THERMAL ADHESIVE COVER AND MANUFACTURING METHOD THEREOF | |
KR960012687A (en) | Power plant and its control method | |
DE69636710D1 (en) | FIXED ELECTROLYTE CONDENSER AND ITS MANUFACTURING METHOD | |
FR2765347B1 (en) | SEMICONDUCTOR BRAGG REFLECTOR AND MANUFACTURING METHOD | |
FR2771748B1 (en) | LUMINOPHORE AND MANUFACTURING METHOD | |
KR960009144A (en) | Lead frame and manufacturing method | |
FR2729449B1 (en) | WATERPROOFING PROFILE AND MANUFACTURING METHOD THEREOF | |
DE69526670D1 (en) | COOLING TOWER AND CONSTRUCTION METHOD | |
DE69526512D1 (en) | RADIATION RECEIVING SYSTEM AND MANUFACTURING METHOD | |
FR2742230B1 (en) | ACCELEROMETER AND MANUFACTURING METHOD | |
FR2728013B1 (en) | DIFFUSION WELDED BLADE CAR AND MANUFACTURING METHOD THEREOF | |
FR2738487B1 (en) | ANTISEPTIC DERMATOLOGICAL COMPOSITION AND ITS MANUFACTURING METHOD | |
DE69516495D1 (en) | Lighting device and device manufacturing method | |
FR2745951B1 (en) | THERMOIONIC CATHODE AND MANUFACTURING METHOD THEREOF | |
FR2754416B1 (en) | ELECTRONIC MODULE AND ITS MANUFACTURING METHOD |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 20 |