FR2728102B1 - - Google Patents
Info
- Publication number
- FR2728102B1 FR2728102B1 FR9415019A FR9415019A FR2728102B1 FR 2728102 B1 FR2728102 B1 FR 2728102B1 FR 9415019 A FR9415019 A FR 9415019A FR 9415019 A FR9415019 A FR 9415019A FR 2728102 B1 FR2728102 B1 FR 2728102B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H10D64/01326—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
- H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9415019A FR2728102A1 (fr) | 1994-12-08 | 1994-12-08 | Procede de fabrication de transistors mos de circuit integre |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9415019A FR2728102A1 (fr) | 1994-12-08 | 1994-12-08 | Procede de fabrication de transistors mos de circuit integre |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2728102A1 FR2728102A1 (fr) | 1996-06-14 |
| FR2728102B1 true FR2728102B1 (cg-RX-API-DMAC10.html) | 1997-02-28 |
Family
ID=9469775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9415019A Granted FR2728102A1 (fr) | 1994-12-08 | 1994-12-08 | Procede de fabrication de transistors mos de circuit integre |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2728102A1 (cg-RX-API-DMAC10.html) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02146732A (ja) * | 1988-07-28 | 1990-06-05 | Fujitsu Ltd | 研摩液及び研摩方法 |
| JPH0744275B2 (ja) * | 1988-10-06 | 1995-05-15 | 日本電気株式会社 | 高耐圧ｍｏｓ型半導体装置の製造方法 |
| JP2551127B2 (ja) * | 1989-01-07 | 1996-11-06 | 三菱電機株式会社 | Ｍｉｓ型半導体装置およびその製造方法 |
| IT1236728B (it) * | 1989-10-24 | 1993-03-31 | Sgs Thomson Microelectronics | Procedimento per formare la struttura di isolamento e la struttura di gate di dispositivi integrati |
| JPH06181310A (ja) * | 1992-12-15 | 1994-06-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5346587A (en) * | 1993-08-12 | 1994-09-13 | Micron Semiconductor, Inc. | Planarization of a gate electrode for improved gate patterning over non-planar active area isolation |
-
1994
- 1994-12-08 FR FR9415019A patent/FR2728102A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2728102A1 (fr) | 1996-06-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20060831 |