FR2728102B1 - - Google Patents

Info

Publication number
FR2728102B1
FR2728102B1 FR9415019A FR9415019A FR2728102B1 FR 2728102 B1 FR2728102 B1 FR 2728102B1 FR 9415019 A FR9415019 A FR 9415019A FR 9415019 A FR9415019 A FR 9415019A FR 2728102 B1 FR2728102 B1 FR 2728102B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9415019A
Other languages
French (fr)
Other versions
FR2728102A1 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR9415019A priority Critical patent/FR2728102A1/fr
Publication of FR2728102A1 publication Critical patent/FR2728102A1/fr
Application granted granted Critical
Publication of FR2728102B1 publication Critical patent/FR2728102B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H10D64/01326—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
FR9415019A 1994-12-08 1994-12-08 Procede de fabrication de transistors mos de circuit integre Granted FR2728102A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9415019A FR2728102A1 (fr) 1994-12-08 1994-12-08 Procede de fabrication de transistors mos de circuit integre

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9415019A FR2728102A1 (fr) 1994-12-08 1994-12-08 Procede de fabrication de transistors mos de circuit integre

Publications (2)

Publication Number Publication Date
FR2728102A1 FR2728102A1 (fr) 1996-06-14
FR2728102B1 true FR2728102B1 (OSRAM) 1997-02-28

Family

ID=9469775

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9415019A Granted FR2728102A1 (fr) 1994-12-08 1994-12-08 Procede de fabrication de transistors mos de circuit integre

Country Status (1)

Country Link
FR (1) FR2728102A1 (OSRAM)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146732A (ja) * 1988-07-28 1990-06-05 Fujitsu Ltd 研摩液及び研摩方法
JPH0744275B2 (ja) * 1988-10-06 1995-05-15 日本電気株式会社 高耐圧ｍｏｓ型半導体装置の製造方法
JP2551127B2 (ja) * 1989-01-07 1996-11-06 三菱電機株式会社 Ｍｉｓ型半導体装置およびその製造方法
IT1236728B (it) * 1989-10-24 1993-03-31 Sgs Thomson Microelectronics Procedimento per formare la struttura di isolamento e la struttura di gate di dispositivi integrati
JPH06181310A (ja) * 1992-12-15 1994-06-28 Mitsubishi Electric Corp 半導体装置の製造方法
US5346587A (en) * 1993-08-12 1994-09-13 Micron Semiconductor, Inc. Planarization of a gate electrode for improved gate patterning over non-planar active area isolation

Also Published As

Publication number Publication date
FR2728102A1 (fr) 1996-06-14

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060831