FR2669477B1 - - Google Patents

Info

Publication number
FR2669477B1
FR2669477B1 FR9014323A FR9014323A FR2669477B1 FR 2669477 B1 FR2669477 B1 FR 2669477B1 FR 9014323 A FR9014323 A FR 9014323A FR 9014323 A FR9014323 A FR 9014323A FR 2669477 B1 FR2669477 B1 FR 2669477B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9014323A
Other languages
French (fr)
Other versions
FR2669477A1 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR9014323A priority Critical patent/FR2669477A1/fr
Priority to EP19910402982 priority patent/EP0486359B1/fr
Priority to DE1991629179 priority patent/DE69129179T2/de
Publication of FR2669477A1 publication Critical patent/FR2669477A1/fr
Application granted granted Critical
Publication of FR2669477B1 publication Critical patent/FR2669477B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Electronic Switches (AREA)
FR9014323A 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee. Granted FR2669477A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9014323A FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.
EP19910402982 EP0486359B1 (fr) 1990-11-16 1991-11-07 Circuit de commande de commutation basse fréquence de transistors à effet de champ et de transistors bipolaires à grille isolée
DE1991629179 DE69129179T2 (de) 1990-11-16 1991-11-07 NF-Schaltsteuerschaltung für Feldeffekttransistoren und Bipolartransistoren mit isoliertem Gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9014323A FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.

Publications (2)

Publication Number Publication Date
FR2669477A1 FR2669477A1 (fr) 1992-05-22
FR2669477B1 true FR2669477B1 (US08197722-20120612-C00042.png) 1997-03-07

Family

ID=9402300

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9014323A Granted FR2669477A1 (fr) 1990-11-16 1990-11-16 Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.

Country Status (3)

Country Link
EP (1) EP0486359B1 (US08197722-20120612-C00042.png)
DE (1) DE69129179T2 (US08197722-20120612-C00042.png)
FR (1) FR2669477A1 (US08197722-20120612-C00042.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684500B1 (fr) * 1991-12-02 1994-06-10 Rahban Thierry Generateur bipolaire a isolation galvanique de polarite commutable.
FR2693604B1 (fr) * 1992-07-10 1994-10-07 Sgs Thomson Microelectronics Convertisseur commandé par impulsions et commande électrique de moteur.
FI97176C (fi) * 1994-09-27 1996-10-25 Abb Industry Oy Puolijohdekytkimen ohjauspiiri
EP0757512B1 (en) * 1995-07-31 2001-11-14 STMicroelectronics S.r.l. Driving circuit, MOS transistor using the same and corresponding applications
JP4317825B2 (ja) * 2005-02-25 2009-08-19 三菱重工業株式会社 インバータ装置
DE102010028817A1 (de) * 2010-05-10 2011-11-10 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Übertragung eines binären Signals über eine Übertragerstrecke

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH635828A5 (de) * 1978-08-30 1983-04-29 Ciba Geigy Ag N-substituierte imide und bisimide.
GB2109184B (en) * 1981-10-22 1984-11-07 Ferranti Ltd Controlling conduction of semiconductor device
CH653828A5 (en) * 1983-09-30 1986-01-15 Bbc Brown Boveri & Cie Pulse transmission circuit for transmission of electrical pulses with potential separation
JPH01114115A (ja) * 1987-10-27 1989-05-02 Yaskawa Electric Mfg Co Ltd 電圧駆動形パワー素子のドライブ回路

Also Published As

Publication number Publication date
DE69129179D1 (de) 1998-05-07
EP0486359A1 (fr) 1992-05-20
FR2669477A1 (fr) 1992-05-22
EP0486359B1 (fr) 1998-04-01
DE69129179T2 (de) 1998-07-30

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090731