FR2658012B1 - Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. - Google Patents
Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.Info
- Publication number
- FR2658012B1 FR2658012B1 FR9001342A FR9001342A FR2658012B1 FR 2658012 B1 FR2658012 B1 FR 2658012B1 FR 9001342 A FR9001342 A FR 9001342A FR 9001342 A FR9001342 A FR 9001342A FR 2658012 B1 FR2658012 B1 FR 2658012B1
- Authority
- FR
- France
- Prior art keywords
- fet
- transistors
- field effect
- high frequency
- suitable field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9001342A FR2658012B1 (fr) | 1990-02-06 | 1990-02-06 | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. |
JP3503994A JPH04505540A (ja) | 1990-02-06 | 1991-02-05 | 内部整合機能を持つ高出力マイクロ波電界効果トランジスタ用ドレインバイアス回路 |
PCT/FR1991/000082 WO1991012659A1 (fr) | 1990-02-06 | 1991-02-05 | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement |
US07/768,849 US5206608A (en) | 1990-02-06 | 1991-02-05 | Drain bias circuit for high power microwave field effect transistors (fets) having internal matching |
CA002050578A CA2050578A1 (fr) | 1990-02-06 | 1991-02-05 | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9001342A FR2658012B1 (fr) | 1990-02-06 | 1990-02-06 | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2658012A1 FR2658012A1 (fr) | 1991-08-09 |
FR2658012B1 true FR2658012B1 (fr) | 1995-07-21 |
Family
ID=9393415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9001342A Expired - Fee Related FR2658012B1 (fr) | 1990-02-06 | 1990-02-06 | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5206608A (fr) |
JP (1) | JPH04505540A (fr) |
CA (1) | CA2050578A1 (fr) |
FR (1) | FR2658012B1 (fr) |
WO (1) | WO1991012659A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5617059A (en) * | 1995-07-07 | 1997-04-01 | Ssb Technologies, Inc. | Power amplifier, and associated method, for a microwave repeater station |
US7034620B2 (en) | 2002-04-24 | 2006-04-25 | Powerwave Technologies, Inc. | RF power amplifier employing bias circuit topologies for minimization of RF amplifier memory effects |
GB2395076A (en) * | 2002-11-01 | 2004-05-12 | Roke Manor Research | Linear high power RF amplifiers |
JP2016058920A (ja) * | 2014-09-10 | 2016-04-21 | 住友電気工業株式会社 | 進行波型増幅器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4277764A (en) * | 1978-08-09 | 1981-07-07 | Harris Corporation | Microwave transistor stabilization circuit |
EP0101174B1 (fr) * | 1982-07-06 | 1986-10-22 | Texas Instruments Incorporated | Amplificateur monolithique à faible bruit à transistor à effet de champ avec montage à grille commune |
DE3234736C1 (de) * | 1982-09-20 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Schaltung zur Gleichstromspeisung von Transistoren |
JPH0754886B2 (ja) * | 1984-02-25 | 1995-06-07 | 日本電信電話株式会社 | 電力増幅器 |
US4591803A (en) * | 1984-05-29 | 1986-05-27 | At&T Bell Laboratories | Linear FET power amplifier |
FR2625052A1 (fr) * | 1987-12-18 | 1989-06-23 | Labo Electronique Physique | Circuit hyperfrequences comprenant au moins un transistor a effet de champ charge |
-
1990
- 1990-02-06 FR FR9001342A patent/FR2658012B1/fr not_active Expired - Fee Related
-
1991
- 1991-02-05 CA CA002050578A patent/CA2050578A1/fr not_active Abandoned
- 1991-02-05 WO PCT/FR1991/000082 patent/WO1991012659A1/fr active Application Filing
- 1991-02-05 US US07/768,849 patent/US5206608A/en not_active Expired - Fee Related
- 1991-02-05 JP JP3503994A patent/JPH04505540A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA2050578A1 (fr) | 1991-08-07 |
FR2658012A1 (fr) | 1991-08-09 |
WO1991012659A1 (fr) | 1991-08-22 |
JPH04505540A (ja) | 1992-09-24 |
US5206608A (en) | 1993-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO921087L (no) | Radiofrekvens-effektforsterkeranordning | |
DK0949754T3 (da) | Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul | |
FR2778272B1 (fr) | Dispositif de radiocommunication et antenne bifrequence realisee selon la technique des microrubans | |
GB9818044D0 (en) | Power transistor device | |
DE69434449D1 (de) | Leistungsschaltung | |
DE69425344D1 (de) | Halbleiterintegrierte Leistungsverstärkerschaltung | |
AU4607499A (en) | Polarimetric method for determining the (main-)oscillation plane of polarised light on about 0.1 m~ and miniaturisable device for its implementation | |
FR2481862B1 (fr) | Circuit de polarisation pour amplificateur de puissance et notamment pour un amplificateur de puissance du type sans commutation | |
EP0665484A3 (fr) | Circuit de réduction de la puissance pour dispositif semi-conducteur synchrone. | |
DE69224405D1 (de) | Hochfrequenzleistungsverstärker | |
NO931029D0 (no) | Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing | |
FR2558659B1 (fr) | Circuit de polarisation d'un transistor a effet de champ | |
KR960012548A (ko) | 분포정수 선로를 사용한 정합회로를 포함하는 마이크로파 전력증폭기를 가진 모노리딕 집적회로 장치 | |
DE69205064D1 (de) | Quartz-Schaltung mit niedriger Leistung. | |
FI970927A0 (fi) | 180 tehojakaja helix-antennia varten | |
EP0427065A3 (en) | Adaptive gate charge circuit for power fets | |
EP0641024A3 (fr) | Dispositif semi-conducteur de puissance. | |
FR2658012B1 (fr) | Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. | |
EP0427086A3 (en) | Adaptive gate discharge circuit for power fets | |
FR2507409B1 (fr) | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ | |
FR2538168B1 (fr) | Dispositif semi-conducteur protege contre le claquage du second genre, en particulier transistor de puissance | |
DE69105073D1 (de) | Stromversorgungsanpassungsschaltung. | |
EP0487328A3 (en) | Semiconductor decoding device comprising a mos fet for discharging an output terminal | |
FR2752289B1 (fr) | Dispositif de refroidissement, notamment de modules electroniques | |
NO307105B1 (no) | Anordning for en boeyebasert bølgekraftinnretning |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |