FR2658012B1 - Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. - Google Patents

Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.

Info

Publication number
FR2658012B1
FR2658012B1 FR9001342A FR9001342A FR2658012B1 FR 2658012 B1 FR2658012 B1 FR 2658012B1 FR 9001342 A FR9001342 A FR 9001342A FR 9001342 A FR9001342 A FR 9001342A FR 2658012 B1 FR2658012 B1 FR 2658012B1
Authority
FR
France
Prior art keywords
fet
transistors
field effect
high frequency
suitable field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9001342A
Other languages
English (en)
Other versions
FR2658012A1 (fr
Inventor
Torres Torres Francisco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agence Spatiale Europeenne
Original Assignee
Agence Spatiale Europeenne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence Spatiale Europeenne filed Critical Agence Spatiale Europeenne
Priority to FR9001342A priority Critical patent/FR2658012B1/fr
Priority to JP3503994A priority patent/JPH04505540A/ja
Priority to PCT/FR1991/000082 priority patent/WO1991012659A1/fr
Priority to US07/768,849 priority patent/US5206608A/en
Priority to CA002050578A priority patent/CA2050578A1/fr
Publication of FR2658012A1 publication Critical patent/FR2658012A1/fr
Application granted granted Critical
Publication of FR2658012B1 publication Critical patent/FR2658012B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
FR9001342A 1990-02-06 1990-02-06 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement. Expired - Fee Related FR2658012B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9001342A FR2658012B1 (fr) 1990-02-06 1990-02-06 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.
JP3503994A JPH04505540A (ja) 1990-02-06 1991-02-05 内部整合機能を持つ高出力マイクロ波電界効果トランジスタ用ドレインバイアス回路
PCT/FR1991/000082 WO1991012659A1 (fr) 1990-02-06 1991-02-05 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement
US07/768,849 US5206608A (en) 1990-02-06 1991-02-05 Drain bias circuit for high power microwave field effect transistors (fets) having internal matching
CA002050578A CA2050578A1 (fr) 1990-02-06 1991-02-05 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9001342A FR2658012B1 (fr) 1990-02-06 1990-02-06 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.

Publications (2)

Publication Number Publication Date
FR2658012A1 FR2658012A1 (fr) 1991-08-09
FR2658012B1 true FR2658012B1 (fr) 1995-07-21

Family

ID=9393415

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9001342A Expired - Fee Related FR2658012B1 (fr) 1990-02-06 1990-02-06 Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.

Country Status (5)

Country Link
US (1) US5206608A (fr)
JP (1) JPH04505540A (fr)
CA (1) CA2050578A1 (fr)
FR (1) FR2658012B1 (fr)
WO (1) WO1991012659A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617059A (en) * 1995-07-07 1997-04-01 Ssb Technologies, Inc. Power amplifier, and associated method, for a microwave repeater station
US7034620B2 (en) 2002-04-24 2006-04-25 Powerwave Technologies, Inc. RF power amplifier employing bias circuit topologies for minimization of RF amplifier memory effects
GB2395076A (en) * 2002-11-01 2004-05-12 Roke Manor Research Linear high power RF amplifiers
JP2016058920A (ja) * 2014-09-10 2016-04-21 住友電気工業株式会社 進行波型増幅器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277764A (en) * 1978-08-09 1981-07-07 Harris Corporation Microwave transistor stabilization circuit
EP0101174B1 (fr) * 1982-07-06 1986-10-22 Texas Instruments Incorporated Amplificateur monolithique à faible bruit à transistor à effet de champ avec montage à grille commune
DE3234736C1 (de) * 1982-09-20 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Schaltung zur Gleichstromspeisung von Transistoren
JPH0754886B2 (ja) * 1984-02-25 1995-06-07 日本電信電話株式会社 電力増幅器
US4591803A (en) * 1984-05-29 1986-05-27 At&T Bell Laboratories Linear FET power amplifier
FR2625052A1 (fr) * 1987-12-18 1989-06-23 Labo Electronique Physique Circuit hyperfrequences comprenant au moins un transistor a effet de champ charge

Also Published As

Publication number Publication date
CA2050578A1 (fr) 1991-08-07
FR2658012A1 (fr) 1991-08-09
WO1991012659A1 (fr) 1991-08-22
JPH04505540A (ja) 1992-09-24
US5206608A (en) 1993-04-27

Similar Documents

Publication Publication Date Title
NO921087L (no) Radiofrekvens-effektforsterkeranordning
DK0949754T3 (da) Höjfrekvent effektforstærkerkredslöb og höjfrekvent effektforstærkermodul
FR2778272B1 (fr) Dispositif de radiocommunication et antenne bifrequence realisee selon la technique des microrubans
GB9818044D0 (en) Power transistor device
DE69434449D1 (de) Leistungsschaltung
DE69425344D1 (de) Halbleiterintegrierte Leistungsverstärkerschaltung
AU4607499A (en) Polarimetric method for determining the (main-)oscillation plane of polarised light on about 0.1 m~ and miniaturisable device for its implementation
FR2481862B1 (fr) Circuit de polarisation pour amplificateur de puissance et notamment pour un amplificateur de puissance du type sans commutation
EP0665484A3 (fr) Circuit de réduction de la puissance pour dispositif semi-conducteur synchrone.
DE69224405D1 (de) Hochfrequenzleistungsverstärker
NO931029D0 (no) Fremgangsmaate og anordning for aa tilveiebringe variabel, rommessig frekvensstyring i plasmaassistert, kjemisk etsing
FR2558659B1 (fr) Circuit de polarisation d'un transistor a effet de champ
KR960012548A (ko) 분포정수 선로를 사용한 정합회로를 포함하는 마이크로파 전력증폭기를 가진 모노리딕 집적회로 장치
DE69205064D1 (de) Quartz-Schaltung mit niedriger Leistung.
FI970927A0 (fi) 180 tehojakaja helix-antennia varten
EP0427065A3 (en) Adaptive gate charge circuit for power fets
EP0641024A3 (fr) Dispositif semi-conducteur de puissance.
FR2658012B1 (fr) Circuit de polarisation de drain pour transistors a effet de champ (fet) de puissance elevee, a hyperfrequences et adaptes interieurement.
EP0427086A3 (en) Adaptive gate discharge circuit for power fets
FR2507409B1 (fr) Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ
FR2538168B1 (fr) Dispositif semi-conducteur protege contre le claquage du second genre, en particulier transistor de puissance
DE69105073D1 (de) Stromversorgungsanpassungsschaltung.
EP0487328A3 (en) Semiconductor decoding device comprising a mos fet for discharging an output terminal
FR2752289B1 (fr) Dispositif de refroidissement, notamment de modules electroniques
NO307105B1 (no) Anordning for en boeyebasert bølgekraftinnretning

Legal Events

Date Code Title Description
ST Notification of lapse