FR2625513B1 - Creusets perfectionnes pour le tirage d'une bande dendritique de silicium - Google Patents

Creusets perfectionnes pour le tirage d'une bande dendritique de silicium

Info

Publication number
FR2625513B1
FR2625513B1 FR888817435A FR8817435A FR2625513B1 FR 2625513 B1 FR2625513 B1 FR 2625513B1 FR 888817435 A FR888817435 A FR 888817435A FR 8817435 A FR8817435 A FR 8817435A FR 2625513 B1 FR2625513 B1 FR 2625513B1
Authority
FR
France
Prior art keywords
crucibles
strip
improved
silicon dendritic
dendritic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888817435A
Other languages
English (en)
Other versions
FR2625513A1 (fr
Inventor
Raymond George Seidensticker
Edgar Leonard Kochka
Charles Stuart Duncan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2625513A1 publication Critical patent/FR2625513A1/fr
Application granted granted Critical
Publication of FR2625513B1 publication Critical patent/FR2625513B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR888817435A 1987-12-31 1988-12-29 Creusets perfectionnes pour le tirage d'une bande dendritique de silicium Expired - Fee Related FR2625513B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/140,071 US4919901A (en) 1987-12-31 1987-12-31 Barrier design for crucibles for silicon dendritic web growth

Publications (2)

Publication Number Publication Date
FR2625513A1 FR2625513A1 (fr) 1989-07-07
FR2625513B1 true FR2625513B1 (fr) 1993-01-08

Family

ID=22489618

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888817435A Expired - Fee Related FR2625513B1 (fr) 1987-12-31 1988-12-29 Creusets perfectionnes pour le tirage d'une bande dendritique de silicium

Country Status (6)

Country Link
US (1) US4919901A (fr)
JP (1) JP2640524B2 (fr)
KR (1) KR890011025A (fr)
AU (1) AU604994B2 (fr)
FR (1) FR2625513B1 (fr)
IT (1) IT1227690B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
IN161924B (fr) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
JPS62128999A (ja) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd ２重るつぼを用いた単結晶引上方法及び２重るつぼ
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Also Published As

Publication number Publication date
KR890011025A (ko) 1989-08-12
FR2625513A1 (fr) 1989-07-07
AU2597388A (en) 1989-07-06
JPH01215790A (ja) 1989-08-29
AU604994B2 (en) 1991-01-03
IT8822999A0 (it) 1988-12-16
IT1227690B (it) 1991-04-23
JP2640524B2 (ja) 1997-08-13
US4919901A (en) 1990-04-24

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse