FR2597885B1 - Monocristal d'un compose du groupe iiib-vb en particulier de gaas et procede pour sa preparation - Google Patents

Monocristal d'un compose du groupe iiib-vb en particulier de gaas et procede pour sa preparation

Info

Publication number
FR2597885B1
FR2597885B1 FR868605969A FR8605969A FR2597885B1 FR 2597885 B1 FR2597885 B1 FR 2597885B1 FR 868605969 A FR868605969 A FR 868605969A FR 8605969 A FR8605969 A FR 8605969A FR 2597885 B1 FR2597885 B1 FR 2597885B1
Authority
FR
France
Prior art keywords
gaas
compound
preparation
single crystal
group iiib
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868605969A
Other languages
English (en)
Other versions
FR2597885A1 (fr
Inventor
Koji Sumino
Fumikazu Yajima
Toshihiko Ibuka
Fumio Orito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Publication of FR2597885A1 publication Critical patent/FR2597885A1/fr
Application granted granted Critical
Publication of FR2597885B1 publication Critical patent/FR2597885B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR868605969A 1985-02-04 1986-04-24 Monocristal d'un compose du groupe iiib-vb en particulier de gaas et procede pour sa preparation Expired - Lifetime FR2597885B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60019506A JPS61178497A (ja) 1985-02-04 1985-02-04 低転位密度ひ化ガリウム単結晶の成長方法

Publications (2)

Publication Number Publication Date
FR2597885A1 FR2597885A1 (fr) 1987-10-30
FR2597885B1 true FR2597885B1 (fr) 1990-11-16

Family

ID=12001256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868605969A Expired - Lifetime FR2597885B1 (fr) 1985-02-04 1986-04-24 Monocristal d'un compose du groupe iiib-vb en particulier de gaas et procede pour sa preparation

Country Status (4)

Country Link
JP (1) JPS61178497A (fr)
DE (1) DE3614079A1 (fr)
FR (1) FR2597885B1 (fr)
GB (1) GB2189166A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
TW319916B (fr) * 1995-06-05 1997-11-11 Hewlett Packard Co
US6794731B2 (en) 1997-02-18 2004-09-21 Lumileds Lighting U.S., Llc Minority carrier semiconductor devices with improved reliability
WO2001098843A1 (fr) * 2000-06-21 2001-12-27 Citizen Watch Co.,Ltd. Horloge electronique generatrice d'energie et son procede de commande
GB2373243B (en) * 2000-09-29 2005-02-23 Showa Denko Kk InP single crystal substrate
DE102007026298A1 (de) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533967A (en) * 1966-11-10 1970-10-13 Monsanto Co Double-doped gallium arsenide and method of preparation
JPS5263065A (en) * 1975-11-19 1977-05-25 Nec Corp Single crystal growth
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
CA1214381A (fr) * 1983-07-20 1986-11-25 Roelof P. Bult Methode de culture de cristaux d'arseniure de gallium sous capsule d'oxyde
JPS60200900A (ja) * 1984-03-26 1985-10-11 Sumitomo Electric Ind Ltd 低転位密度の３−５化合物半導体単結晶
US4594173A (en) * 1984-04-19 1986-06-10 Westinghouse Electric Corp. Indium doped gallium arsenide crystals and method of preparation

Also Published As

Publication number Publication date
GB8609480D0 (en) 1986-05-21
FR2597885A1 (fr) 1987-10-30
DE3614079A1 (de) 1987-10-29
GB2189166A (en) 1987-10-21
JPS61178497A (ja) 1986-08-11

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