FR2568064B1 - - Google Patents
Info
- Publication number
- FR2568064B1 FR2568064B1 FR8511015A FR8511015A FR2568064B1 FR 2568064 B1 FR2568064 B1 FR 2568064B1 FR 8511015 A FR8511015 A FR 8511015A FR 8511015 A FR8511015 A FR 8511015A FR 2568064 B1 FR2568064 B1 FR 2568064B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2568064A1 FR2568064A1 (fr) | 1986-01-24 |
| FR2568064B1 true FR2568064B1 (el) | 1994-04-22 |
Family
ID=15470921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8511015A Granted FR2568064A1 (fr) | 1984-07-18 | 1985-07-18 | Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0685455B2 (el) |
| KR (2) | KR860001502A (el) |
| CA (1) | CA1253945A (el) |
| DE (1) | DE3525703A1 (el) |
| FR (1) | FR2568064A1 (el) |
| GB (1) | GB2163288A (el) |
| NL (1) | NL8502080A (el) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| EP0014588B1 (en) * | 1979-02-13 | 1983-12-14 | Fujitsu Limited | A semiconductor light emitting device |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
| US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko not_active IP Right Cessation
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko active
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR860001502A (ko) | 1986-02-26 |
| GB8518182D0 (en) | 1985-08-21 |
| CA1253945A (en) | 1989-05-09 |
| JPS6127694A (ja) | 1986-02-07 |
| NL8502080A (nl) | 1986-02-17 |
| FR2568064A1 (fr) | 1986-01-24 |
| JPH0685455B2 (ja) | 1994-10-26 |
| DE3525703A1 (de) | 1986-02-20 |
| KR0128711B1 (ko) | 1998-04-07 |
| GB2163288A (en) | 1986-02-19 |