FR2556881B1 - Triac a double gachette centrale - Google Patents

Triac a double gachette centrale

Info

Publication number
FR2556881B1
FR2556881B1 FR8320029A FR8320029A FR2556881B1 FR 2556881 B1 FR2556881 B1 FR 2556881B1 FR 8320029 A FR8320029 A FR 8320029A FR 8320029 A FR8320029 A FR 8320029A FR 2556881 B1 FR2556881 B1 FR 2556881B1
Authority
FR
France
Prior art keywords
triac
double central
central trigger
trigger
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8320029A
Other languages
English (en)
Other versions
FR2556881A1 (fr
Inventor
Francis Daubresse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR8320029A priority Critical patent/FR2556881B1/fr
Publication of FR2556881A1 publication Critical patent/FR2556881A1/fr
Application granted granted Critical
Publication of FR2556881B1 publication Critical patent/FR2556881B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR8320029A 1983-12-14 1983-12-14 Triac a double gachette centrale Expired FR2556881B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8320029A FR2556881B1 (fr) 1983-12-14 1983-12-14 Triac a double gachette centrale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8320029A FR2556881B1 (fr) 1983-12-14 1983-12-14 Triac a double gachette centrale

Publications (2)

Publication Number Publication Date
FR2556881A1 FR2556881A1 (fr) 1985-06-21
FR2556881B1 true FR2556881B1 (fr) 1986-04-11

Family

ID=9295170

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8320029A Expired FR2556881B1 (fr) 1983-12-14 1983-12-14 Triac a double gachette centrale

Country Status (1)

Country Link
FR (1) FR2556881B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809227B1 (fr) * 2000-05-17 2002-08-16 St Microelectronics Sa Structure peripherique de composant vertical

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301193A (en) * 1970-02-27 1972-12-29 Mullard Ltd Improvements in semiconductor devices
DE2723951A1 (de) * 1977-05-27 1978-11-30 Bbc Brown Boveri & Cie In zwei quadranten der strom- spannungs-charakteristik schaltbares leistungs-halbleiterbauelement

Also Published As

Publication number Publication date
FR2556881A1 (fr) 1985-06-21

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Legal Events

Date Code Title Description
ST Notification of lapse