FR2553580B1 - Procede de passivation de detecteurs photoconducteurs hg cd te - Google Patents
Procede de passivation de detecteurs photoconducteurs hg cd teInfo
- Publication number
- FR2553580B1 FR2553580B1 FR8316261A FR8316261A FR2553580B1 FR 2553580 B1 FR2553580 B1 FR 2553580B1 FR 8316261 A FR8316261 A FR 8316261A FR 8316261 A FR8316261 A FR 8316261A FR 2553580 B1 FR2553580 B1 FR 2553580B1
- Authority
- FR
- France
- Prior art keywords
- passivating
- photoconductor
- sensors
- photoconductor sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8316261A FR2553580B1 (fr) | 1983-10-13 | 1983-10-13 | Procede de passivation de detecteurs photoconducteurs hg cd te |
| US06/657,585 US4624715A (en) | 1983-10-13 | 1984-10-04 | Process for passivation of photoconductive detectors made of Hg Cd Te |
| JP59212748A JPS6098685A (ja) | 1983-10-13 | 1984-10-12 | HgCdTeよりなる光伝導検出器の不動化方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8316261A FR2553580B1 (fr) | 1983-10-13 | 1983-10-13 | Procede de passivation de detecteurs photoconducteurs hg cd te |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2553580A1 FR2553580A1 (fr) | 1985-04-19 |
| FR2553580B1 true FR2553580B1 (fr) | 1986-09-12 |
Family
ID=9293074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8316261A Expired FR2553580B1 (fr) | 1983-10-13 | 1983-10-13 | Procede de passivation de detecteurs photoconducteurs hg cd te |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4624715A (fr) |
| JP (1) | JPS6098685A (fr) |
| FR (1) | FR2553580B1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0744285B2 (ja) * | 1988-06-22 | 1995-05-15 | 富士通株式会社 | 陽極酸化膜の形成方法 |
| JP4723702B2 (ja) * | 1999-06-04 | 2011-07-13 | シヤチハタ株式会社 | 筆記具及びペン芯ホルダー離脱方法 |
| KR100422294B1 (ko) * | 2001-06-28 | 2004-03-12 | 한국과학기술연구원 | Cd/Hg 분위기에서 열처리에 의한 HgCdTe 접합다이오드의 패시배이션 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3977018A (en) * | 1972-12-04 | 1976-08-24 | Texas Instruments Incorporated | Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation |
| JPS5220765A (en) * | 1975-08-11 | 1977-02-16 | Fujitsu Ltd | Three-way semi-conductor surface treatment |
| EP0068692A2 (fr) * | 1981-07-01 | 1983-01-05 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Dispositifs photodétecteurs |
-
1983
- 1983-10-13 FR FR8316261A patent/FR2553580B1/fr not_active Expired
-
1984
- 1984-10-04 US US06/657,585 patent/US4624715A/en not_active Expired - Fee Related
- 1984-10-12 JP JP59212748A patent/JPS6098685A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6098685A (ja) | 1985-06-01 |
| US4624715A (en) | 1986-11-25 |
| FR2553580A1 (fr) | 1985-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |