FR2549094B1 - Procede de preparation de hg1-xcdxte monocristallin - Google Patents
Procede de preparation de hg1-xcdxte monocristallinInfo
- Publication number
- FR2549094B1 FR2549094B1 FR8409823A FR8409823A FR2549094B1 FR 2549094 B1 FR2549094 B1 FR 2549094B1 FR 8409823 A FR8409823 A FR 8409823A FR 8409823 A FR8409823 A FR 8409823A FR 2549094 B1 FR2549094 B1 FR 2549094B1
- Authority
- FR
- France
- Prior art keywords
- xcdxte
- monocrystalline
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3322789A DE3322789C2 (de) | 1983-06-24 | 1983-06-24 | Verfahren zum Herstellen von einkristallinem Hg↓1↓↓-↓↓x↓Cd↓x↓Te |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2549094A1 FR2549094A1 (fr) | 1985-01-18 |
FR2549094B1 true FR2549094B1 (fr) | 1986-11-07 |
Family
ID=6202302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8409823A Expired FR2549094B1 (fr) | 1983-06-24 | 1984-06-22 | Procede de preparation de hg1-xcdxte monocristallin |
Country Status (4)
Country | Link |
---|---|
US (1) | US4591410A (fr) |
DE (1) | DE3322789C2 (fr) |
FR (1) | FR2549094B1 (fr) |
GB (1) | GB2141945B (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593196B1 (fr) * | 1986-01-21 | 1988-04-15 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hg1-xo cdxo te |
US5205997A (en) * | 1989-07-31 | 1993-04-27 | Grumman Aerospace Corporation | Ampoule for crystal growth |
US5693138A (en) * | 1993-12-22 | 1997-12-02 | Tokin Corporation | Magnetooptical element |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1793672A (en) * | 1926-02-16 | 1931-02-24 | Percy W Bridgman | Crystals and their manufacture |
US3022144A (en) * | 1958-03-17 | 1962-02-20 | Gen Electric | Method of preparing single crystal materials |
US3622399A (en) * | 1968-12-31 | 1971-11-23 | Texas Instruments Inc | Method for preparing single crystal pseudobinary alloys |
DE2315162C3 (de) * | 1973-03-27 | 1979-02-01 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren und Vorrichtung zur Herstellung von homogenem Halbleitermaterial |
US3849205A (en) * | 1973-08-27 | 1974-11-19 | Texas Instruments Inc | Enhancement of solid state recrystallization by induced nucleation |
CA1197755A (fr) * | 1980-05-22 | 1985-12-10 | Robert A. Lancaster | Prise directionnelle controlee d'alliages semiconducteurs |
-
1983
- 1983-06-24 DE DE3322789A patent/DE3322789C2/de not_active Expired
-
1984
- 1984-06-06 GB GB08414443A patent/GB2141945B/en not_active Expired
- 1984-06-19 US US06/623,132 patent/US4591410A/en not_active Expired - Fee Related
- 1984-06-22 FR FR8409823A patent/FR2549094B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3322789A1 (de) | 1985-01-10 |
GB2141945B (en) | 1986-07-16 |
US4591410A (en) | 1986-05-27 |
FR2549094A1 (fr) | 1985-01-18 |
DE3322789C2 (de) | 1985-12-05 |
GB2141945A (en) | 1985-01-09 |
GB8414443D0 (en) | 1984-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |