FR2543363B1 - Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor - Google Patents

Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor

Info

Publication number
FR2543363B1
FR2543363B1 FR8304978A FR8304978A FR2543363B1 FR 2543363 B1 FR2543363 B1 FR 2543363B1 FR 8304978 A FR8304978 A FR 8304978A FR 8304978 A FR8304978 A FR 8304978A FR 2543363 B1 FR2543363 B1 FR 2543363B1
Authority
FR
France
Prior art keywords
transistor
integrated circuit
threshold voltage
mos transistors
voltage adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8304978A
Other languages
English (en)
Other versions
FR2543363A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EFCIS
Original Assignee
EFCIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EFCIS filed Critical EFCIS
Priority to FR8304978A priority Critical patent/FR2543363B1/fr
Publication of FR2543363A1 publication Critical patent/FR2543363A1/fr
Application granted granted Critical
Publication of FR2543363B1 publication Critical patent/FR2543363B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H03F3/45748—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedback circuit
    • H03F3/45753—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedback circuit using switching means, e.g. sample and hold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45341—Indexing scheme relating to differential amplifiers the AAC comprising controlled floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8304978A 1983-03-25 1983-03-25 Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor Expired FR2543363B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8304978A FR2543363B1 (fr) 1983-03-25 1983-03-25 Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8304978A FR2543363B1 (fr) 1983-03-25 1983-03-25 Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor

Publications (2)

Publication Number Publication Date
FR2543363A1 FR2543363A1 (fr) 1984-09-28
FR2543363B1 true FR2543363B1 (fr) 1985-06-21

Family

ID=9287256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8304978A Expired FR2543363B1 (fr) 1983-03-25 1983-03-25 Circuit integre analogique a transistors mos avec ajustement electrique de la tension de seuil d'au moins un transistor

Country Status (1)

Country Link
FR (1) FR2543363B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841252A (en) * 1987-08-05 1989-06-20 Brooktree Corporation System for compensating for offset voltages in comparators
GB9204434D0 (en) * 1992-02-27 1992-04-15 Sec Dep For The Defence Differential amplifier
DE69521137T2 (de) * 1995-12-29 2001-10-11 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zur Kompensation von Offsetspannungen in MOS-Differenzstufen
IL200511A0 (en) 2008-08-26 2010-04-29 Bajnar Dan David Method and system for maintenance of an air-condition unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454894A (en) * 1965-11-24 1969-07-08 Leeds & Northrup Co Stabilization of drain-electrode current of insulated-gate field-effect transistor
GB2100540B (en) * 1978-03-08 1983-06-02 Hitachi Ltd Reference voltage generators
JPS6039180B2 (ja) * 1978-11-28 1985-09-04 日本電気株式会社 センスアンプ
US4210875A (en) * 1978-12-29 1980-07-01 Harris Corporation Integrated amplifier with adjustable offset voltage
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile

Also Published As

Publication number Publication date
FR2543363A1 (fr) 1984-09-28

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse