FR2540672B1 - Utilisation de getter en tube ferme - Google Patents

Utilisation de getter en tube ferme

Info

Publication number
FR2540672B1
FR2540672B1 FR8401565A FR8401565A FR2540672B1 FR 2540672 B1 FR2540672 B1 FR 2540672B1 FR 8401565 A FR8401565 A FR 8401565A FR 8401565 A FR8401565 A FR 8401565A FR 2540672 B1 FR2540672 B1 FR 2540672B1
Authority
FR
France
Prior art keywords
getter
closed tube
tube
closed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8401565A
Other languages
English (en)
French (fr)
Other versions
FR2540672A1 (fr
Inventor
Li Shu Chen
Joseph Desalvo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2540672A1 publication Critical patent/FR2540672A1/fr
Application granted granted Critical
Publication of FR2540672B1 publication Critical patent/FR2540672B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR8401565A 1983-02-04 1984-02-01 Utilisation de getter en tube ferme Expired FR2540672B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46443283A 1983-02-04 1983-02-04

Publications (2)

Publication Number Publication Date
FR2540672A1 FR2540672A1 (fr) 1984-08-10
FR2540672B1 true FR2540672B1 (fr) 1986-05-30

Family

ID=23843930

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8401565A Expired FR2540672B1 (fr) 1983-02-04 1984-02-01 Utilisation de getter en tube ferme

Country Status (9)

Country Link
JP (1) JPS59147438A (OSRAM)
BE (1) BE898841A (OSRAM)
BR (1) BR8400503A (OSRAM)
CA (1) CA1207089A (OSRAM)
DE (1) DE3403108A1 (OSRAM)
FR (1) FR2540672B1 (OSRAM)
GB (1) GB2134711B (OSRAM)
IE (1) IE55119B1 (OSRAM)
IN (1) IN159497B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005058713B4 (de) * 2005-12-08 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL285088A (OSRAM) * 1961-11-18
DE2758576C2 (de) * 1977-12-29 1986-04-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall
JPS56169324A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Diffusion of impurity

Also Published As

Publication number Publication date
BR8400503A (pt) 1984-09-11
GB2134711A (en) 1984-08-15
CA1207089A (en) 1986-07-02
GB8402533D0 (en) 1984-03-07
JPS59147438A (ja) 1984-08-23
DE3403108A1 (de) 1984-08-09
BE898841A (fr) 1984-08-03
IE840100L (en) 1984-08-04
GB2134711B (en) 1987-04-23
IN159497B (OSRAM) 1987-05-23
IE55119B1 (en) 1990-06-06
FR2540672A1 (fr) 1984-08-10

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Legal Events

Date Code Title Description
ST Notification of lapse