BR8400503A - Processo para fabricacao de semicondutores por remocao de impurezas em tubo fechado - Google Patents

Processo para fabricacao de semicondutores por remocao de impurezas em tubo fechado

Info

Publication number
BR8400503A
BR8400503A BR8400503A BR8400503A BR8400503A BR 8400503 A BR8400503 A BR 8400503A BR 8400503 A BR8400503 A BR 8400503A BR 8400503 A BR8400503 A BR 8400503A BR 8400503 A BR8400503 A BR 8400503A
Authority
BR
Brazil
Prior art keywords
removing impurities
closed tube
manufacturing semiconductors
semiconductors
manufacturing
Prior art date
Application number
BR8400503A
Other languages
English (en)
Portuguese (pt)
Inventor
Li S Chen
Joseph Desalvo
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BR8400503A publication Critical patent/BR8400503A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
BR8400503A 1983-02-04 1984-02-06 Processo para fabricacao de semicondutores por remocao de impurezas em tubo fechado BR8400503A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46443283A 1983-02-04 1983-02-04

Publications (1)

Publication Number Publication Date
BR8400503A true BR8400503A (pt) 1984-09-11

Family

ID=23843930

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8400503A BR8400503A (pt) 1983-02-04 1984-02-06 Processo para fabricacao de semicondutores por remocao de impurezas em tubo fechado

Country Status (9)

Country Link
JP (1) JPS59147438A (OSRAM)
BE (1) BE898841A (OSRAM)
BR (1) BR8400503A (OSRAM)
CA (1) CA1207089A (OSRAM)
DE (1) DE3403108A1 (OSRAM)
FR (1) FR2540672B1 (OSRAM)
GB (1) GB2134711B (OSRAM)
IE (1) IE55119B1 (OSRAM)
IN (1) IN159497B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005058713B4 (de) 2005-12-08 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287407A (OSRAM) * 1961-11-18
DE2758576C2 (de) * 1977-12-29 1986-04-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall
JPS56169324A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Diffusion of impurity

Also Published As

Publication number Publication date
FR2540672B1 (fr) 1986-05-30
GB2134711A (en) 1984-08-15
CA1207089A (en) 1986-07-02
GB2134711B (en) 1987-04-23
IE840100L (en) 1984-08-04
IN159497B (OSRAM) 1987-05-23
GB8402533D0 (en) 1984-03-07
IE55119B1 (en) 1990-06-06
FR2540672A1 (fr) 1984-08-10
BE898841A (fr) 1984-08-03
DE3403108A1 (de) 1984-08-09
JPS59147438A (ja) 1984-08-23

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