FR2537778B1 - METHOD FOR METALLIZING A SINGLE-CRYSTAL SILICON WAFER - Google Patents

METHOD FOR METALLIZING A SINGLE-CRYSTAL SILICON WAFER

Info

Publication number
FR2537778B1
FR2537778B1 FR8319680A FR8319680A FR2537778B1 FR 2537778 B1 FR2537778 B1 FR 2537778B1 FR 8319680 A FR8319680 A FR 8319680A FR 8319680 A FR8319680 A FR 8319680A FR 2537778 B1 FR2537778 B1 FR 2537778B1
Authority
FR
France
Prior art keywords
metallizing
silicon wafer
crystal silicon
crystal
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8319680A
Other languages
French (fr)
Other versions
FR2537778A1 (en
Inventor
Anders Nilarp
Herbert J Gould
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/447,760 external-priority patent/US4878099A/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2537778A1 publication Critical patent/FR2537778A1/en
Application granted granted Critical
Publication of FR2537778B1 publication Critical patent/FR2537778B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Die Bonding (AREA)
FR8319680A 1982-12-08 1983-12-08 METHOD FOR METALLIZING A SINGLE-CRYSTAL SILICON WAFER Expired FR2537778B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44776182A 1982-12-08 1982-12-08
US06/447,760 US4878099A (en) 1982-12-08 1982-12-08 Metallizing system for semiconductor wafers

Publications (2)

Publication Number Publication Date
FR2537778A1 FR2537778A1 (en) 1984-06-15
FR2537778B1 true FR2537778B1 (en) 1986-12-19

Family

ID=27035081

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8319680A Expired FR2537778B1 (en) 1982-12-08 1983-12-08 METHOD FOR METALLIZING A SINGLE-CRYSTAL SILICON WAFER

Country Status (5)

Country Link
DE (1) DE3344462A1 (en)
FR (1) FR2537778B1 (en)
GB (2) GB2132412B (en)
IT (1) IT1194505B (en)
SE (1) SE8306663L (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3301666A1 (en) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim METHOD FOR PRODUCING A MULTI-LAYER CONTACT METALIZATION
JPH07118534B2 (en) * 1990-02-22 1995-12-18 三菱電機株式会社 Method for manufacturing semiconductor device
US5422286A (en) * 1994-10-07 1995-06-06 United Microelectronics Corp. Process for fabricating high-voltage semiconductor power device
CN1241253C (en) * 2002-06-24 2006-02-08 丰田合成株式会社 Semiconductor element and mfg method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL291270A (en) * 1961-08-12
US3288662A (en) * 1963-07-18 1966-11-29 Rca Corp Method of etching to dice a semiconductor slice
DE1258235B (en) * 1965-01-04 1968-01-04 Licentia Gmbh Process for the production of an edge zone profiling of silicon wafers that increases the blocking voltage strength
DE1286641B (en) * 1966-08-26 1969-01-09 Bosch Gmbh Robert Method for contacting a semiconductor arrangement
DE1789062C3 (en) * 1968-09-30 1978-11-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for producing metal contact layers for semiconductor arrangements
IT995593B (en) * 1972-12-11 1975-11-20 Rca Corp SEMICONDUCTIVE DEVICE WITH BAR CONNECTIONS AND MANUFACTURING METHOD OF THE SAME
DE2332822B2 (en) * 1973-06-28 1978-04-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for the production of diffused, contacted and surface-passivated semiconductor components from semiconductor wafers made of silicon
GB1487201A (en) * 1974-12-20 1977-09-28 Lucas Electrical Ltd Method of manufacturing semi-conductor devices
US4042951A (en) * 1975-09-25 1977-08-16 Texas Instruments Incorporated Gold-germanium alloy contacts for a semiconductor device
IN144812B (en) * 1976-01-22 1978-07-15 Westinghouse Electric Corp
IT1059086B (en) * 1976-04-14 1982-05-31 Ates Componenti Elettron PROCEDURE FOR THE PASSIVATION OF HIGH-REVERSE HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES
DE2656015A1 (en) * 1976-12-10 1978-06-15 Bbc Brown Boveri & Cie METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENTS
DE2709802A1 (en) * 1977-03-07 1978-09-14 Siemens Ag Impurity removal from semiconductor device formed by ion implantation - by etching with hydrofluoric acid to remove surface layer
GB2064860B (en) * 1979-10-18 1984-01-25 Gen Electric Method for metallizing a semiconductor element
CA1164734A (en) * 1980-07-11 1984-04-03 Michael Schneider Method for applying an anti-reflection coating to a solar cell
US4339869A (en) * 1980-09-15 1982-07-20 General Electric Company Method of making low resistance contacts in semiconductor devices by ion induced silicides

Also Published As

Publication number Publication date
GB2132412A (en) 1984-07-04
GB8332808D0 (en) 1984-01-18
SE8306663D0 (en) 1983-12-02
DE3344462A1 (en) 1984-06-20
SE8306663L (en) 1984-06-09
GB2132412B (en) 1987-08-19
IT1194505B (en) 1988-09-22
FR2537778A1 (en) 1984-06-15
GB2168843B (en) 1987-08-19
IT8324070A0 (en) 1983-12-06
GB8529225D0 (en) 1986-01-02
GB2168843A (en) 1986-06-25
DE3344462C2 (en) 1989-12-28

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Legal Events

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