FR2535897A1 - Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs - Google Patents

Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs Download PDF

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Publication number
FR2535897A1
FR2535897A1 FR8218499A FR8218499A FR2535897A1 FR 2535897 A1 FR2535897 A1 FR 2535897A1 FR 8218499 A FR8218499 A FR 8218499A FR 8218499 A FR8218499 A FR 8218499A FR 2535897 A1 FR2535897 A1 FR 2535897A1
Authority
FR
France
Prior art keywords
passivation
manufacturing
semiconductor
semiconductor material
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8218499A
Other languages
English (en)
French (fr)
Other versions
FR2535897B1 (https=
Inventor
Didier Pribat
Sylvain Delage
Dominique Dieumegard
Raymond Poirier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8218499A priority Critical patent/FR2535897A1/fr
Priority to EP83402076A priority patent/EP0109321A1/fr
Priority to JP58206096A priority patent/JPS5998528A/ja
Publication of FR2535897A1 publication Critical patent/FR2535897A1/fr
Application granted granted Critical
Publication of FR2535897B1 publication Critical patent/FR2535897B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
FR8218499A 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs Granted FR2535897A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8218499A FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs
EP83402076A EP0109321A1 (fr) 1982-11-04 1983-10-25 Procédé de passivation de la surface d'un matériau semi-conducteur et son application à la fabrication de dispositifs à semi-conducteur
JP58206096A JPS5998528A (ja) 1982-11-04 1983-11-04 半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8218499A FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2535897A1 true FR2535897A1 (fr) 1984-05-11
FR2535897B1 FR2535897B1 (https=) 1985-02-08

Family

ID=9278896

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8218499A Granted FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs

Country Status (3)

Country Link
EP (1) EP0109321A1 (https=)
JP (1) JPS5998528A (https=)
FR (1) FR2535897A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115958302A (zh) * 2022-12-30 2023-04-14 深圳铭创智能装备有限公司 一种led面板返修方法及led面板返修设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1154038C (zh) 1998-04-24 2004-06-16 日本写真印刷株式会社 触摸面板装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, volume 34, no. 9, mai 1979 (NEW YORK, US) D.H. AUSTON et al. "Dual-wavelength laser annealing", pages 558-560 *
APPLIED PHYSICS LETTERS, volume 36, no. 1, janvier 1980 (NEW YORK, US) D.M. ZEHNER et al. "Preparation of atomically clean silicon surfaces by pulsed laser irradiation", pages 56-59 *
EXTENDED ABSTRACTS OF THE JOURNAL OF THE ELECTROCHEMICAL SOCIETY, volume 79-2, 14-19 octobre 1979 (PRINCETON, US) I. GOLECKI et al. "Transient annealing of GaAs by electron and laser beams", pages 1279-1281 *
EXTENDED ABSTRACTS OF THE JOURNAL OF THE ELECTROCHEMICAL SOCIETY, volume 82-2, octobre 1982 (PENNINGTON, US) D.J. GODFREY et al. "A study of pulsed laser and multiplescan electron beam annealing of arsenic implanted N-channel MOS transistor source/drain regions", page 248 *
IEEE ELECTRON DEVICE LETTERS, volume EDL-2, no. 5, mai 1981 (NEW YORK, US) W.T. ANDERSON et al. "Laser annealed Ta/Ge and Ni/Ge ohmic contacts to GaAs", pages 115-117 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115958302A (zh) * 2022-12-30 2023-04-14 深圳铭创智能装备有限公司 一种led面板返修方法及led面板返修设备

Also Published As

Publication number Publication date
JPS5998528A (ja) 1984-06-06
FR2535897B1 (https=) 1985-02-08
EP0109321A1 (fr) 1984-05-23

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