JPS5998528A - 半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法 - Google Patents

半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法

Info

Publication number
JPS5998528A
JPS5998528A JP58206096A JP20609683A JPS5998528A JP S5998528 A JPS5998528 A JP S5998528A JP 58206096 A JP58206096 A JP 58206096A JP 20609683 A JP20609683 A JP 20609683A JP S5998528 A JPS5998528 A JP S5998528A
Authority
JP
Japan
Prior art keywords
semiconductor material
semiconductor
inactivating
material according
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58206096A
Other languages
English (en)
Japanese (ja)
Inventor
デイデユ−ル・プリパ
シルベ−ン・デラ−ジエ
レイモンド・ポワリエ−ル
ドミニク・ドユメガ−ド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5998528A publication Critical patent/JPS5998528A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP58206096A 1982-11-04 1983-11-04 半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法 Pending JPS5998528A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8218499 1982-11-04
FR8218499A FR2535897A1 (fr) 1982-11-04 1982-11-04 Procede de passivation de la surface d'un materiau semi-conducteur et son application a la fabrication de dispositifs a semi-conducteurs

Publications (1)

Publication Number Publication Date
JPS5998528A true JPS5998528A (ja) 1984-06-06

Family

ID=9278896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58206096A Pending JPS5998528A (ja) 1982-11-04 1983-11-04 半導体材料の表面の不活性化方法およびその方法を含む半導体素子の製造方法

Country Status (3)

Country Link
EP (1) EP0109321A1 (https=)
JP (1) JPS5998528A (https=)
FR (1) FR2535897A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6556189B1 (en) 1998-04-24 2003-04-29 Nissha Printing Co., Ltd. Touch panel device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115958302B (zh) * 2022-12-30 2024-11-15 深圳铭创智能装备有限公司 一种led面板返修方法及led面板返修设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6556189B1 (en) 1998-04-24 2003-04-29 Nissha Printing Co., Ltd. Touch panel device

Also Published As

Publication number Publication date
FR2535897A1 (fr) 1984-05-11
FR2535897B1 (https=) 1985-02-08
EP0109321A1 (fr) 1984-05-23

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