FR2533752B1 - DEPLETION TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF - Google Patents

DEPLETION TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

Info

Publication number
FR2533752B1
FR2533752B1 FR8314855A FR8314855A FR2533752B1 FR 2533752 B1 FR2533752 B1 FR 2533752B1 FR 8314855 A FR8314855 A FR 8314855A FR 8314855 A FR8314855 A FR 8314855A FR 2533752 B1 FR2533752 B1 FR 2533752B1
Authority
FR
France
Prior art keywords
production
field effect
effect transistor
type field
depletion type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8314855A
Other languages
French (fr)
Other versions
FR2533752A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2533752A1 publication Critical patent/FR2533752A1/en
Application granted granted Critical
Publication of FR2533752B1 publication Critical patent/FR2533752B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
FR8314855A 1982-09-27 1983-09-19 DEPLETION TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF Expired FR2533752B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823235677 DE3235677A1 (en) 1982-09-27 1982-09-27 Depletion-type field-effect transistor and method of producing it

Publications (2)

Publication Number Publication Date
FR2533752A1 FR2533752A1 (en) 1984-03-30
FR2533752B1 true FR2533752B1 (en) 1985-06-28

Family

ID=6174237

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8314855A Expired FR2533752B1 (en) 1982-09-27 1983-09-19 DEPLETION TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

Country Status (2)

Country Link
DE (1) DE3235677A1 (en)
FR (1) FR2533752B1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1527773A (en) * 1974-10-18 1978-10-11 Matsushita Electric Ind Co Ltd Mos type semiconductor device
US3995172A (en) * 1975-06-05 1976-11-30 International Business Machines Corporation Enhancement-and depletion-type field effect transistors connected in parallel
US4212683A (en) 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
DE2911726C2 (en) * 1978-03-27 1985-08-01 Ncr Corp., Dayton, Ohio Process for the production of a field effect transistor
DE3146910A1 (en) * 1981-11-26 1983-06-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Semiconductor device having a field-effect transistor structure

Also Published As

Publication number Publication date
FR2533752A1 (en) 1984-03-30
DE3235677A1 (en) 1984-03-29

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Legal Events

Date Code Title Description
ST Notification of lapse