FR2526584A1 - Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres - Google Patents

Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres Download PDF

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Publication number
FR2526584A1
FR2526584A1 FR8207752A FR8207752A FR2526584A1 FR 2526584 A1 FR2526584 A1 FR 2526584A1 FR 8207752 A FR8207752 A FR 8207752A FR 8207752 A FR8207752 A FR 8207752A FR 2526584 A1 FR2526584 A1 FR 2526584A1
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FR
France
Prior art keywords
resin
thickness
metal
substrate
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8207752A
Other languages
English (en)
French (fr)
Other versions
FR2526584B1 (enrdf_load_stackoverflow
Inventor
Georges Rey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8207752A priority Critical patent/FR2526584A1/fr
Publication of FR2526584A1 publication Critical patent/FR2526584A1/fr
Application granted granted Critical
Publication of FR2526584B1 publication Critical patent/FR2526584B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4821—Bridge structure with air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR8207752A 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres Granted FR2526584A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8207752A FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8207752A FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Publications (2)

Publication Number Publication Date
FR2526584A1 true FR2526584A1 (fr) 1983-11-10
FR2526584B1 FR2526584B1 (enrdf_load_stackoverflow) 1984-09-14

Family

ID=9273717

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207752A Granted FR2526584A1 (fr) 1982-05-04 1982-05-04 Procede de realisation d'une structure metallique de forme complexe pour semi-conducteurs et circuits integres

Country Status (1)

Country Link
FR (1) FR2526584A1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651375A1 (fr) * 1989-08-31 1991-03-01 Mitsubishi Electric Corp Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ.
EP0427187A3 (en) * 1989-11-06 1991-07-10 Sumitomo Electric Industries, Ltd. Microwave semiconductor device
EP0437194A3 (en) * 1990-01-05 1991-07-24 Sumitomo Electric Industries, Ltd. Schottky barrier field effect transistor
US5168329A (en) * 1989-11-06 1992-12-01 Sumitomo Electric Industries, Ltd. Microwave semiconductor device capable of controlling a threshold voltage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2535156A1 (de) * 1975-08-06 1977-02-10 Siemens Ag Verfahren zur herstellung einer schicht mit vorgegebenem muster von bereichen geringerer schichtdicke
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2535156A1 (de) * 1975-08-06 1977-02-10 Siemens Ag Verfahren zur herstellung einer schicht mit vorgegebenem muster von bereichen geringerer schichtdicke
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651375A1 (fr) * 1989-08-31 1991-03-01 Mitsubishi Electric Corp Structure de grille de commande pour un dispositif semiconducteur a transistor a effet de champ.
EP0427187A3 (en) * 1989-11-06 1991-07-10 Sumitomo Electric Industries, Ltd. Microwave semiconductor device
US5168329A (en) * 1989-11-06 1992-12-01 Sumitomo Electric Industries, Ltd. Microwave semiconductor device capable of controlling a threshold voltage
EP0437194A3 (en) * 1990-01-05 1991-07-24 Sumitomo Electric Industries, Ltd. Schottky barrier field effect transistor

Also Published As

Publication number Publication date
FR2526584B1 (enrdf_load_stackoverflow) 1984-09-14

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