FR2525034A1 - Laser a semiconducteur a coupleur directif permettant une sortie laterale - Google Patents

Laser a semiconducteur a coupleur directif permettant une sortie laterale Download PDF

Info

Publication number
FR2525034A1
FR2525034A1 FR8206250A FR8206250A FR2525034A1 FR 2525034 A1 FR2525034 A1 FR 2525034A1 FR 8206250 A FR8206250 A FR 8206250A FR 8206250 A FR8206250 A FR 8206250A FR 2525034 A1 FR2525034 A1 FR 2525034A1
Authority
FR
France
Prior art keywords
light
guide
laser
resonator
ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8206250A
Other languages
English (en)
French (fr)
Other versions
FR2525034B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8206250A priority Critical patent/FR2525034A1/fr
Publication of FR2525034A1 publication Critical patent/FR2525034A1/fr
Application granted granted Critical
Publication of FR2525034B1 publication Critical patent/FR2525034B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR8206250A 1982-04-09 1982-04-09 Laser a semiconducteur a coupleur directif permettant une sortie laterale Granted FR2525034A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8206250A FR2525034A1 (fr) 1982-04-09 1982-04-09 Laser a semiconducteur a coupleur directif permettant une sortie laterale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8206250A FR2525034A1 (fr) 1982-04-09 1982-04-09 Laser a semiconducteur a coupleur directif permettant une sortie laterale

Publications (2)

Publication Number Publication Date
FR2525034A1 true FR2525034A1 (fr) 1983-10-14
FR2525034B1 FR2525034B1 (OSRAM) 1984-05-11

Family

ID=9272946

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8206250A Granted FR2525034A1 (fr) 1982-04-09 1982-04-09 Laser a semiconducteur a coupleur directif permettant une sortie laterale

Country Status (1)

Country Link
FR (1) FR2525034A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175351A3 (de) * 1984-09-21 1987-07-29 Siemens Aktiengesellschaft Verkoppelte Laserdioden-Anordnung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806830A (en) * 1972-02-23 1974-04-23 Nippon Electric Co Composite semiconductor laser device
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806830A (en) * 1972-02-23 1974-04-23 Nippon Electric Co Composite semiconductor laser device
FR2347802A1 (fr) * 1976-04-08 1977-11-04 Xerox Corp Diode laser a ondes de fuite

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXRV/78 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0175351A3 (de) * 1984-09-21 1987-07-29 Siemens Aktiengesellschaft Verkoppelte Laserdioden-Anordnung

Also Published As

Publication number Publication date
FR2525034B1 (OSRAM) 1984-05-11

Similar Documents

Publication Publication Date Title
JPH0256837B2 (OSRAM)
US7983315B2 (en) Frequency changing device
JP2001189519A (ja) 半導体レーザ装置
JP3099921B2 (ja) 受光素子付き面発光型半導体レーザ装置
JP7293348B2 (ja) 位相結合されたレーザ装置、および位相結合されたレーザ装置を製造するための方法
JPS6286881A (ja) 光出力装置
JPH05251824A (ja) 半導体レーザの製造方法
FR2744292A1 (fr) Composant d'emission laser multi-longueur d'onde
FR2525034A1 (fr) Laser a semiconducteur a coupleur directif permettant une sortie laterale
JP3061169B2 (ja) 半導体レーザ
JPS5934153Y2 (ja) レ−ザ光学結合装置
JPH05251812A (ja) 量子井戸構造光変調器付き分布帰還型半導体レーザおよびその製造方法
US4663761A (en) Semiconductor diode lasers
JPH03195076A (ja) 外部共振器型波長可変半導体レーザ
JPH073908B2 (ja) 半導体発光装置の製造方法
US20230361536A1 (en) Laser module
JP3981257B2 (ja) 面発光型半導体レーザ
GB2209869A (en) Edge emitting light emissive diode
JPS627186A (ja) 半導体レ−ザ装置
KR20250030811A (ko) 광 집적 장치
JP2663450B2 (ja) 半導体レーザ装置
KR100212460B1 (ko) 장파장 표면방출 레이저 칩 및 그 제조방법
JPS62221182A (ja) 分布反射型レ−ザ
JPS63114288A (ja) 半導体発光素子
JPS61281562A (ja) 半導体発光素子

Legal Events

Date Code Title Description
ST Notification of lapse