FR2524713B1 - - Google Patents
Info
- Publication number
- FR2524713B1 FR2524713B1 FR8205781A FR8205781A FR2524713B1 FR 2524713 B1 FR2524713 B1 FR 2524713B1 FR 8205781 A FR8205781 A FR 8205781A FR 8205781 A FR8205781 A FR 8205781A FR 2524713 B1 FR2524713 B1 FR 2524713B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0618—Manufacture or treatment of FETs having Schottky gates of lateral Schottky gate FETs having multiple independently-addressable gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8205781A FR2524713A1 (fr) | 1982-04-02 | 1982-04-02 | Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor |
| EP83400604A EP0091342B1 (fr) | 1982-04-02 | 1983-03-23 | Procédé de réalisation d'un transistor à effet de champ du type planar à grille supplémentaire enterrée |
| DE8383400604T DE3362238D1 (en) | 1982-04-02 | 1983-03-23 | Process for manufacturing a planar field-effect transistor having a supplementary buried gate |
| JP58056846A JPS58182880A (ja) | 1982-04-02 | 1983-04-02 | 電界効果トランジスタおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8205781A FR2524713A1 (fr) | 1982-04-02 | 1982-04-02 | Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2524713A1 FR2524713A1 (fr) | 1983-10-07 |
| FR2524713B1 true FR2524713B1 (en:Method) | 1984-05-04 |
Family
ID=9272704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8205781A Granted FR2524713A1 (fr) | 1982-04-02 | 1982-04-02 | Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0091342B1 (en:Method) |
| JP (1) | JPS58182880A (en:Method) |
| DE (1) | DE3362238D1 (en:Method) |
| FR (1) | FR2524713A1 (en:Method) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2677808B2 (ja) * | 1987-12-12 | 1997-11-17 | 工業技術院長 | 電界効果型トランジスタ |
| JP2010056521A (ja) * | 2008-07-30 | 2010-03-11 | Sharp Corp | 半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1543363A (en) * | 1975-02-26 | 1979-04-04 | Nippon Electric Co | Dual-gate schottky barrier gate field effect transistors |
| GB1601059A (en) * | 1978-05-31 | 1981-10-21 | Secr Defence | Fet devices and their fabrication |
| US4249190A (en) * | 1979-07-05 | 1981-02-03 | Bell Telephone Laboratories, Incorporated | Floating gate vertical FET |
-
1982
- 1982-04-02 FR FR8205781A patent/FR2524713A1/fr active Granted
-
1983
- 1983-03-23 EP EP83400604A patent/EP0091342B1/fr not_active Expired
- 1983-03-23 DE DE8383400604T patent/DE3362238D1/de not_active Expired
- 1983-04-02 JP JP58056846A patent/JPS58182880A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE3362238D1 (en) | 1986-04-03 |
| FR2524713A1 (fr) | 1983-10-07 |
| JPS58182880A (ja) | 1983-10-25 |
| EP0091342B1 (fr) | 1986-02-26 |
| EP0091342A1 (fr) | 1983-10-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |