FR2522534A1 - Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement - Google Patents

Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement Download PDF

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Publication number
FR2522534A1
FR2522534A1 FR8203787A FR8203787A FR2522534A1 FR 2522534 A1 FR2522534 A1 FR 2522534A1 FR 8203787 A FR8203787 A FR 8203787A FR 8203787 A FR8203787 A FR 8203787A FR 2522534 A1 FR2522534 A1 FR 2522534A1
Authority
FR
France
Prior art keywords
reaction tube
cooling
annular space
annular
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8203787A
Other languages
English (en)
French (fr)
Other versions
FR2522534B1 (cg-RX-API-DMAC10.html
Inventor
Bernard Guerra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATELIER ELECTRO THERMIE CONST
Original Assignee
ATELIER ELECTRO THERMIE CONST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATELIER ELECTRO THERMIE CONST filed Critical ATELIER ELECTRO THERMIE CONST
Priority to FR8203787A priority Critical patent/FR2522534A1/fr
Publication of FR2522534A1 publication Critical patent/FR2522534A1/fr
Application granted granted Critical
Publication of FR2522534B1 publication Critical patent/FR2522534B1/fr
Granted legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12Heating of the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8203787A 1982-03-05 1982-03-05 Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement Granted FR2522534A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8203787A FR2522534A1 (fr) 1982-03-05 1982-03-05 Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8203787A FR2522534A1 (fr) 1982-03-05 1982-03-05 Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement

Publications (2)

Publication Number Publication Date
FR2522534A1 true FR2522534A1 (fr) 1983-09-09
FR2522534B1 FR2522534B1 (cg-RX-API-DMAC10.html) 1984-05-25

Family

ID=9271697

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8203787A Granted FR2522534A1 (fr) 1982-03-05 1982-03-05 Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement

Country Status (1)

Country Link
FR (1) FR2522534A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2673273A1 (fr) * 1991-02-26 1992-08-28 Piezo Ceram Electronique Four continu multifonctions.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1904790A1 (de) * 1969-01-31 1971-02-18 Licentia Gmbh Verfahren zum Eindiffundieren von Stoerstellen in Halbleiterkoerper
FR2235487A1 (cg-RX-API-DMAC10.html) * 1973-06-29 1975-01-24 Ibm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1904790A1 (de) * 1969-01-31 1971-02-18 Licentia Gmbh Verfahren zum Eindiffundieren von Stoerstellen in Halbleiterkoerper
FR2235487A1 (cg-RX-API-DMAC10.html) * 1973-06-29 1975-01-24 Ibm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2673273A1 (fr) * 1991-02-26 1992-08-28 Piezo Ceram Electronique Four continu multifonctions.

Also Published As

Publication number Publication date
FR2522534B1 (cg-RX-API-DMAC10.html) 1984-05-25

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