FR2518807A1 - Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide - Google Patents

Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide Download PDF

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Publication number
FR2518807A1
FR2518807A1 FR8124166A FR8124166A FR2518807A1 FR 2518807 A1 FR2518807 A1 FR 2518807A1 FR 8124166 A FR8124166 A FR 8124166A FR 8124166 A FR8124166 A FR 8124166A FR 2518807 A1 FR2518807 A1 FR 2518807A1
Authority
FR
France
Prior art keywords
deposition
mixture
decomposition
silane
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8124166A
Other languages
English (en)
French (fr)
Other versions
FR2518807B1 (OSRAM
Inventor
Nicolas Szydlo
Eric Chartier
Nicole Proust
Daniel Kaplan
Jose Magarino
Serge Le Berre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8124166A priority Critical patent/FR2518807A1/fr
Publication of FR2518807A1 publication Critical patent/FR2518807A1/fr
Application granted granted Critical
Publication of FR2518807B1 publication Critical patent/FR2518807B1/fr
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/132—Thermal activation of liquid crystals exhibiting a thermo-optic effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
FR8124166A 1981-12-23 1981-12-23 Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide Granted FR2518807A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8124166A FR2518807A1 (fr) 1981-12-23 1981-12-23 Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8124166A FR2518807A1 (fr) 1981-12-23 1981-12-23 Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide

Publications (2)

Publication Number Publication Date
FR2518807A1 true FR2518807A1 (fr) 1983-06-24
FR2518807B1 FR2518807B1 (OSRAM) 1984-04-06

Family

ID=9265364

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8124166A Granted FR2518807A1 (fr) 1981-12-23 1981-12-23 Procede de realisation d'une diode en silicium amorphe, equipement pour la mise en oeuvre d'un tel procede et application a un dispositif d'affichage a cristal liquide

Country Status (1)

Country Link
FR (1) FR2518807A1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556882A1 (fr) * 1983-12-14 1985-06-21 Fairchild Camera Instr Co Composant semiconducteur rapide, notamment diode pin haute tension
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
US5061040A (en) * 1984-01-23 1991-10-29 Ois Optical Imaging Systems, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *
EXBK/81 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556882A1 (fr) * 1983-12-14 1985-06-21 Fairchild Camera Instr Co Composant semiconducteur rapide, notamment diode pin haute tension
EP0148065A3 (fr) * 1983-12-14 1985-11-21 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Composant semiconducteur rapide, notamment diode pin haute tension
US5061040A (en) * 1984-01-23 1991-10-29 Ois Optical Imaging Systems, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display

Also Published As

Publication number Publication date
FR2518807B1 (OSRAM) 1984-04-06

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