FR2515866B1 - - Google Patents

Info

Publication number
FR2515866B1
FR2515866B1 FR8120444A FR8120444A FR2515866B1 FR 2515866 B1 FR2515866 B1 FR 2515866B1 FR 8120444 A FR8120444 A FR 8120444A FR 8120444 A FR8120444 A FR 8120444A FR 2515866 B1 FR2515866 B1 FR 2515866B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8120444A
Other languages
French (fr)
Other versions
FR2515866A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8120444A priority Critical patent/FR2515866A1/fr
Priority to DE8282401919T priority patent/DE3265875D1/de
Priority to EP82401919A priority patent/EP0078726B1/fr
Priority to JP57189953A priority patent/JPS5884480A/ja
Publication of FR2515866A1 publication Critical patent/FR2515866A1/fr
Application granted granted Critical
Publication of FR2515866B1 publication Critical patent/FR2515866B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • H10N80/10Gunn-effect devices
    • H10N80/107Gunn diodes
FR8120444A 1981-10-30 1981-10-30 Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences Granted FR2515866A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8120444A FR2515866A1 (fr) 1981-10-30 1981-10-30 Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences
DE8282401919T DE3265875D1 (en) 1981-10-30 1982-10-19 Transferred electron device operating in the microwave domain
EP82401919A EP0078726B1 (fr) 1981-10-30 1982-10-19 Dispositif à transfert d'électrons fonctionnant dans le domaine des hyperfréquences
JP57189953A JPS5884480A (ja) 1981-10-30 1982-10-28 Uhf領域で作動する電子移動デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8120444A FR2515866A1 (fr) 1981-10-30 1981-10-30 Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences

Publications (2)

Publication Number Publication Date
FR2515866A1 FR2515866A1 (fr) 1983-05-06
FR2515866B1 true FR2515866B1 (enExample) 1983-12-02

Family

ID=9263581

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8120444A Granted FR2515866A1 (fr) 1981-10-30 1981-10-30 Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences

Country Status (4)

Country Link
EP (1) EP0078726B1 (enExample)
JP (1) JPS5884480A (enExample)
DE (1) DE3265875D1 (enExample)
FR (1) FR2515866A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519473A1 (fr) * 1981-12-31 1983-07-08 Thomson Csf Dispositif unipolaire a transfert d'electrons du type diode gunn

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1266154A (enExample) * 1968-07-02 1972-03-08
NL6902447A (enExample) * 1969-02-14 1970-08-18
FR2293068A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif semi-conducteur a effet gunn

Also Published As

Publication number Publication date
FR2515866A1 (fr) 1983-05-06
EP0078726B1 (fr) 1985-08-28
DE3265875D1 (en) 1985-10-03
EP0078726A1 (fr) 1983-05-11
JPS5884480A (ja) 1983-05-20

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Legal Events

Date Code Title Description
ST Notification of lapse