FR2515866A1 - Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences - Google Patents
Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences Download PDFInfo
- Publication number
- FR2515866A1 FR2515866A1 FR8120444A FR8120444A FR2515866A1 FR 2515866 A1 FR2515866 A1 FR 2515866A1 FR 8120444 A FR8120444 A FR 8120444A FR 8120444 A FR8120444 A FR 8120444A FR 2515866 A1 FR2515866 A1 FR 2515866A1
- Authority
- FR
- France
- Prior art keywords
- layer
- cathode
- zones
- insulating
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000027756 respiratory electron transport chain Effects 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001465 metallisation Methods 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000002784 hot electron Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 H + Chemical class 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004126 brilliant black BN Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000008261 resistance mechanism Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Details Of Aerials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8120444A FR2515866A1 (fr) | 1981-10-30 | 1981-10-30 | Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences |
| DE8282401919T DE3265875D1 (en) | 1981-10-30 | 1982-10-19 | Transferred electron device operating in the microwave domain |
| EP82401919A EP0078726B1 (fr) | 1981-10-30 | 1982-10-19 | Dispositif à transfert d'électrons fonctionnant dans le domaine des hyperfréquences |
| JP57189953A JPS5884480A (ja) | 1981-10-30 | 1982-10-28 | Uhf領域で作動する電子移動デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8120444A FR2515866A1 (fr) | 1981-10-30 | 1981-10-30 | Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2515866A1 true FR2515866A1 (fr) | 1983-05-06 |
| FR2515866B1 FR2515866B1 (enExample) | 1983-12-02 |
Family
ID=9263581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8120444A Granted FR2515866A1 (fr) | 1981-10-30 | 1981-10-30 | Dispositif a transfert d'electrons fonctionnant le domaine des hyperfrequences |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0078726B1 (enExample) |
| JP (1) | JPS5884480A (enExample) |
| DE (1) | DE3265875D1 (enExample) |
| FR (1) | FR2515866A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2519473A1 (fr) * | 1981-12-31 | 1983-07-08 | Thomson Csf | Dispositif unipolaire a transfert d'electrons du type diode gunn |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2031421A1 (enExample) * | 1969-02-14 | 1970-11-20 | Philips Nv | |
| GB1266154A (enExample) * | 1968-07-02 | 1972-03-08 | ||
| FR2293068A1 (fr) * | 1974-11-29 | 1976-06-25 | Thomson Csf | Dispositif semi-conducteur a effet gunn |
-
1981
- 1981-10-30 FR FR8120444A patent/FR2515866A1/fr active Granted
-
1982
- 1982-10-19 DE DE8282401919T patent/DE3265875D1/de not_active Expired
- 1982-10-19 EP EP82401919A patent/EP0078726B1/fr not_active Expired
- 1982-10-28 JP JP57189953A patent/JPS5884480A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1266154A (enExample) * | 1968-07-02 | 1972-03-08 | ||
| FR2031421A1 (enExample) * | 1969-02-14 | 1970-11-20 | Philips Nv | |
| FR2293068A1 (fr) * | 1974-11-29 | 1976-06-25 | Thomson Csf | Dispositif semi-conducteur a effet gunn |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0078726B1 (fr) | 1985-08-28 |
| DE3265875D1 (en) | 1985-10-03 |
| JPS5884480A (ja) | 1983-05-20 |
| FR2515866B1 (enExample) | 1983-12-02 |
| EP0078726A1 (fr) | 1983-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |