FR2514558B1 - - Google Patents
Info
- Publication number
- FR2514558B1 FR2514558B1 FR8119252A FR8119252A FR2514558B1 FR 2514558 B1 FR2514558 B1 FR 2514558B1 FR 8119252 A FR8119252 A FR 8119252A FR 8119252 A FR8119252 A FR 8119252A FR 2514558 B1 FR2514558 B1 FR 2514558B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
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- H10P32/12—
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- H10P32/171—
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- H10P76/40—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8119252A FR2514558A1 (fr) | 1981-10-13 | 1981-10-13 | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8119252A FR2514558A1 (fr) | 1981-10-13 | 1981-10-13 | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2514558A1 FR2514558A1 (fr) | 1983-04-15 |
| FR2514558B1 true FR2514558B1 (enExample) | 1985-05-17 |
Family
ID=9262994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8119252A Granted FR2514558A1 (fr) | 1981-10-13 | 1981-10-13 | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2514558A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3531631A1 (de) * | 1985-09-05 | 1987-03-05 | Licentia Gmbh | Asymmetrischer thyristor und verfahren zu seiner herstellung |
| CN114759087A (zh) * | 2022-04-21 | 2022-07-15 | 西安派瑞功率半导体变流技术股份有限公司 | 一种具有强穿通的非对称快速晶闸管 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2230749C3 (de) * | 1972-06-23 | 1978-11-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von Halbleiterbauelementen |
| US3795554A (en) * | 1972-12-20 | 1974-03-05 | Int Rectifier Corp | Process for simultaneous diffusion of group iii-group v intermetallic compounds into semiconductor wafers |
| DK139798C (da) * | 1973-12-03 | 1979-09-17 | Licentia Gmbh | Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf |
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1981
- 1981-10-13 FR FR8119252A patent/FR2514558A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2514558A1 (fr) | 1983-04-15 |