FR2506073B1 - Procede et dispositif de traitement de semi-conducteurs utilisant une source de rayonnement du type corps noir ayant un flux d'energie a distribution uniforme dans un plan - Google Patents

Procede et dispositif de traitement de semi-conducteurs utilisant une source de rayonnement du type corps noir ayant un flux d'energie a distribution uniforme dans un plan

Info

Publication number
FR2506073B1
FR2506073B1 FR8208065A FR8208065A FR2506073B1 FR 2506073 B1 FR2506073 B1 FR 2506073B1 FR 8208065 A FR8208065 A FR 8208065A FR 8208065 A FR8208065 A FR 8208065A FR 2506073 B1 FR2506073 B1 FR 2506073B1
Authority
FR
France
Prior art keywords
plane
processing device
radiation source
uniform distribution
semiconductor processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8208065A
Other languages
English (en)
French (fr)
Other versions
FR2506073A1 (fr
Inventor
Richard Stephen Muka
Carl Joseph Russo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2506073A1 publication Critical patent/FR2506073A1/fr
Application granted granted Critical
Publication of FR2506073B1 publication Critical patent/FR2506073B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Furnace Details (AREA)
  • Recrystallisation Techniques (AREA)
FR8208065A 1981-05-12 1982-05-10 Procede et dispositif de traitement de semi-conducteurs utilisant une source de rayonnement du type corps noir ayant un flux d'energie a distribution uniforme dans un plan Expired FR2506073B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/262,838 US4417347A (en) 1981-05-12 1981-05-12 Semiconductor processor incorporating blackbody radiation source with constant planar energy flux

Publications (2)

Publication Number Publication Date
FR2506073A1 FR2506073A1 (fr) 1982-11-19
FR2506073B1 true FR2506073B1 (fr) 1986-12-05

Family

ID=22999281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8208065A Expired FR2506073B1 (fr) 1981-05-12 1982-05-10 Procede et dispositif de traitement de semi-conducteurs utilisant une source de rayonnement du type corps noir ayant un flux d'energie a distribution uniforme dans un plan

Country Status (7)

Country Link
US (1) US4417347A (enExample)
JP (1) JPS57187942A (enExample)
CH (1) CH671312A5 (enExample)
DE (1) DE3216850A1 (enExample)
FR (1) FR2506073B1 (enExample)
GB (1) GB2098437B (enExample)
NL (1) NL8201958A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4474831A (en) * 1982-08-27 1984-10-02 Varian Associates, Inc. Method for reflow of phosphosilicate glass
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
DE3305934A1 (de) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur temperaturbehandlung von substraten, insbesondere von halbleiterkristallscheiben
US4522845A (en) * 1983-06-20 1985-06-11 Varian Associates, Inc. Process for producing a layer of a metal silicide by applying multichromatic radiation
US4503087A (en) * 1983-08-29 1985-03-05 Varian Associates, Inc. Process for high temperature drive-in diffusion of dopants into semiconductor wafers
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
GB8527062D0 (en) * 1985-11-02 1985-12-04 Plessey Co Plc Mos transistor manufacture
US4717588A (en) * 1985-12-23 1988-01-05 Motorola Inc. Metal redistribution by rapid thermal processing
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
US5126533A (en) * 1990-03-19 1992-06-30 Conductus, Inc. Substrate heater utilizing protective heat sinking means
US5365875A (en) * 1991-03-25 1994-11-22 Fuji Xerox Co., Ltd. Semiconductor element manufacturing method
TW291589B (enExample) * 1995-03-30 1996-11-21 Ftl Co Ltd
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US7855088B2 (en) * 2006-12-21 2010-12-21 Texas Instruments Incorporated Method for manufacturing integrated circuits by guardbanding die regions

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3138697A (en) * 1962-10-16 1964-06-23 Barnes Eng Co Black body radiation sources
US3263016A (en) * 1963-10-30 1966-07-26 Branstetter James Robert Black-body furnace
DE1936245A1 (de) * 1969-07-16 1971-02-04 Beckman Instruments Gmbh Infrarotstrahleranordnung
JPS5327476B2 (enExample) * 1972-05-11 1978-08-08
US3901183A (en) * 1973-06-12 1975-08-26 Extrion Corp Wafer treatment apparatus
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US3954191A (en) * 1974-11-18 1976-05-04 Extrion Corporation Isolation lock for workpieces
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4097226A (en) * 1976-10-26 1978-06-27 General Electric Company Furnace for practising temperature gradient zone melting
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4311427A (en) * 1979-12-21 1982-01-19 Varian Associates, Inc. Wafer transfer system

Also Published As

Publication number Publication date
GB2098437A (en) 1982-11-17
US4417347A (en) 1983-11-22
DE3216850C2 (enExample) 1992-05-21
JPS57187942A (en) 1982-11-18
CH671312A5 (enExample) 1989-08-15
DE3216850A1 (de) 1982-12-02
GB2098437B (en) 1985-06-12
NL8201958A (nl) 1982-12-01
FR2506073A1 (fr) 1982-11-19

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Legal Events

Date Code Title Description
ST Notification of lapse