FR2500855B1 - - Google Patents
Info
- Publication number
- FR2500855B1 FR2500855B1 FR8103986A FR8103986A FR2500855B1 FR 2500855 B1 FR2500855 B1 FR 2500855B1 FR 8103986 A FR8103986 A FR 8103986A FR 8103986 A FR8103986 A FR 8103986A FR 2500855 B1 FR2500855 B1 FR 2500855B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P32/1414—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
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- H10P14/24—
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- H10P14/272—
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- H10P14/2905—
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- H10P14/3211—
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- H10P14/3411—
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- H10P32/171—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103986A FR2500855A1 (fr) | 1981-02-27 | 1981-02-27 | Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103986A FR2500855A1 (fr) | 1981-02-27 | 1981-02-27 | Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2500855A1 FR2500855A1 (fr) | 1982-09-03 |
| FR2500855B1 true FR2500855B1 (enExample) | 1983-04-15 |
Family
ID=9255712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8103986A Granted FR2500855A1 (fr) | 1981-02-27 | 1981-02-27 | Procede de dopage et de metallisation d'une zone superficielle d'un composant semi-conducteur et diode zener obtenue |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2500855A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2676594B1 (fr) * | 1991-05-17 | 1997-04-18 | Sgs Thomson Microelectronics | Procede de prise de contact sur un composant semiconducteur. |
| CN115911136A (zh) * | 2022-11-21 | 2023-04-04 | 捷捷半导体有限公司 | 芯片结构及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2207654B2 (de) * | 1972-02-18 | 1974-02-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer Zenerdiode |
| US4106051A (en) * | 1972-11-08 | 1978-08-08 | Ferranti Limited | Semiconductor devices |
| JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
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1981
- 1981-02-27 FR FR8103986A patent/FR2500855A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2500855A1 (fr) | 1982-09-03 |