FR2500768B1 - - Google Patents
Info
- Publication number
- FR2500768B1 FR2500768B1 FR8103940A FR8103940A FR2500768B1 FR 2500768 B1 FR2500768 B1 FR 2500768B1 FR 8103940 A FR8103940 A FR 8103940A FR 8103940 A FR8103940 A FR 8103940A FR 2500768 B1 FR2500768 B1 FR 2500768B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103940A FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8103940A FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2500768A1 FR2500768A1 (fr) | 1982-09-03 |
| FR2500768B1 true FR2500768B1 (oth) | 1984-05-25 |
Family
ID=9255691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8103940A Granted FR2500768A1 (fr) | 1981-02-27 | 1981-02-27 | Creuset demontable, procede de fabrication, et cellules solaires au silicium ainsi obtenues |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2500768A1 (oth) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
| DE3820714A1 (de) * | 1988-06-18 | 1989-12-21 | Sigri Gmbh | Tiegel fuer schmelzfluessiges silicium |
| DE4127792C1 (oth) * | 1991-08-22 | 1992-08-06 | W.C. Heraeus Gmbh, 6450 Hanau, De | |
| FR2757182B1 (fr) * | 1996-12-17 | 2001-01-26 | Saint Gobain Norton Ind Cerami | Procede et dispositif pour la croissance de cristal |
| JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
| JP5198731B2 (ja) | 2004-01-29 | 2013-05-15 | 京セラ株式会社 | シリコンインゴット製造用鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法 |
| KR20090023498A (ko) * | 2006-06-23 | 2009-03-04 | 알이씨 스캔웨이퍼 에이에스 | 반도체 등급 다결정 실리콘 잉곳의 직접 응결을 위한 도가니 및 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3139653A (en) * | 1959-08-06 | 1964-07-07 | Theodore H Orem | Apparatus for the growth of preferentially oriented single crystals of metals |
| FR1301121A (fr) * | 1961-08-29 | 1962-08-10 | Schunk & Ebe Gmbh | Récipients pour la fabrication ou le traitement de semi-conducteurs |
| FR1343740A (fr) * | 1962-10-12 | 1963-11-22 | Electronique & Physique | Procédé de fabrication de lames de silicium et photodiodes obtenues à partir de ces lames |
| GB1577413A (en) * | 1976-03-17 | 1980-10-22 | Metals Research Ltd | Growth of crystalline material |
-
1981
- 1981-02-27 FR FR8103940A patent/FR2500768A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2500768A1 (fr) | 1982-09-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name | ||
| ST | Notification of lapse |