FR2499316B1 - - Google Patents

Info

Publication number
FR2499316B1
FR2499316B1 FR8102131A FR8102131A FR2499316B1 FR 2499316 B1 FR2499316 B1 FR 2499316B1 FR 8102131 A FR8102131 A FR 8102131A FR 8102131 A FR8102131 A FR 8102131A FR 2499316 B1 FR2499316 B1 FR 2499316B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8102131A
Other languages
French (fr)
Other versions
FR2499316A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8102131A priority Critical patent/FR2499316A1/fr
Publication of FR2499316A1 publication Critical patent/FR2499316A1/fr
Application granted granted Critical
Publication of FR2499316B1 publication Critical patent/FR2499316B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
FR8102131A 1981-02-04 1981-02-04 Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue Granted FR2499316A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8102131A FR2499316A1 (fr) 1981-02-04 1981-02-04 Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8102131A FR2499316A1 (fr) 1981-02-04 1981-02-04 Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue

Publications (2)

Publication Number Publication Date
FR2499316A1 FR2499316A1 (fr) 1982-08-06
FR2499316B1 true FR2499316B1 (de) 1983-11-18

Family

ID=9254828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8102131A Granted FR2499316A1 (fr) 1981-02-04 1981-02-04 Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue

Country Status (1)

Country Link
FR (1) FR2499316A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712503A1 (de) * 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
WO2008043827A2 (de) * 2006-10-12 2008-04-17 Centrotherm Photovoltaics Ag Verfahren zur passivierung von solarzellen
KR101714779B1 (ko) 2010-10-11 2017-03-09 엘지전자 주식회사 태양전지 및 이의 제조 방법
TWI662715B (zh) * 2017-10-27 2019-06-11 財團法人工業技術研究院 太陽能電池

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (de) * 1974-11-20 1976-05-24
US4227941A (en) * 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells

Also Published As

Publication number Publication date
FR2499316A1 (fr) 1982-08-06

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse