FR2499316A1 - Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue - Google Patents
Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue Download PDFInfo
- Publication number
- FR2499316A1 FR2499316A1 FR8102131A FR8102131A FR2499316A1 FR 2499316 A1 FR2499316 A1 FR 2499316A1 FR 8102131 A FR8102131 A FR 8102131A FR 8102131 A FR8102131 A FR 8102131A FR 2499316 A1 FR2499316 A1 FR 2499316A1
- Authority
- FR
- France
- Prior art keywords
- layer
- cell
- surface layer
- metallisation
- lamellae
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000000126 substance Substances 0.000 title claims description 5
- 238000001465 metallisation Methods 0.000 title abstract 4
- 238000010521 absorption reaction Methods 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000002344 surface layer Substances 0.000 claims abstract description 22
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 4
- 230000002829 reductive effect Effects 0.000 abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010277 boron hydride Inorganic materials 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102131A FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102131A FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2499316A1 true FR2499316A1 (fr) | 1982-08-06 |
| FR2499316B1 FR2499316B1 (de) | 1983-11-18 |
Family
ID=9254828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102131A Granted FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2499316A1 (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886555A (en) * | 1987-04-13 | 1989-12-12 | Nukem Gmbh | Solar cell |
| WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| US8927854B2 (en) | 2010-10-11 | 2015-01-06 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| US20190131472A1 (en) * | 2017-10-27 | 2019-05-02 | Industrial Technology Research Institute | Solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
| US4227941A (en) * | 1979-03-21 | 1980-10-14 | Massachusetts Institute Of Technology | Shallow-homojunction solar cells |
-
1981
- 1981-02-04 FR FR8102131A patent/FR2499316A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
| US4227941A (en) * | 1979-03-21 | 1980-10-14 | Massachusetts Institute Of Technology | Shallow-homojunction solar cells |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886555A (en) * | 1987-04-13 | 1989-12-12 | Nukem Gmbh | Solar cell |
| WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| WO2008043827A3 (de) * | 2006-10-12 | 2008-08-14 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| US8927854B2 (en) | 2010-10-11 | 2015-01-06 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| DE102011115581B4 (de) | 2010-10-11 | 2020-04-23 | Lg Electronics Inc. | Verfahren zur Herstellung einer Solarzelle |
| US20190131472A1 (en) * | 2017-10-27 | 2019-05-02 | Industrial Technology Research Institute | Solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2499316B1 (de) | 1983-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |