FR2497603B1 - - Google Patents
Info
- Publication number
- FR2497603B1 FR2497603B1 FR8100096A FR8100096A FR2497603B1 FR 2497603 B1 FR2497603 B1 FR 2497603B1 FR 8100096 A FR8100096 A FR 8100096A FR 8100096 A FR8100096 A FR 8100096A FR 2497603 B1 FR2497603 B1 FR 2497603B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8100096A FR2497603A1 (fr) | 1981-01-06 | 1981-01-06 | Transistor a faible temps de commutation, de type normalement bloquant |
| EP81402096A EP0055968A3 (fr) | 1981-01-06 | 1981-12-31 | Transistor à effet de champ à faible temps de commutation du type normalement bloquant |
| JP55582A JPS57136375A (en) | 1981-01-06 | 1982-01-05 | Normal off type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8100096A FR2497603A1 (fr) | 1981-01-06 | 1981-01-06 | Transistor a faible temps de commutation, de type normalement bloquant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2497603A1 FR2497603A1 (fr) | 1982-07-09 |
| FR2497603B1 true FR2497603B1 (US06272168-20010807-M00014.png) | 1984-08-10 |
Family
ID=9253889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8100096A Granted FR2497603A1 (fr) | 1981-01-06 | 1981-01-06 | Transistor a faible temps de commutation, de type normalement bloquant |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0055968A3 (US06272168-20010807-M00014.png) |
| JP (1) | JPS57136375A (US06272168-20010807-M00014.png) |
| FR (1) | FR2497603A1 (US06272168-20010807-M00014.png) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4583105A (en) * | 1982-12-30 | 1986-04-15 | International Business Machines Corporation | Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
| JPS60136380A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体装置 |
| EP0162541A1 (en) * | 1984-03-28 | 1985-11-27 | International Standard Electric Corporation | Integrated heterojunction FET and photodiode |
| EP0160377A1 (en) * | 1984-03-28 | 1985-11-06 | International Standard Electric Corporation | Heterojunction photo-FET and method of making the same |
| JPS613465A (ja) * | 1984-06-18 | 1986-01-09 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPS61161773A (ja) * | 1985-01-11 | 1986-07-22 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
| GB2172742B (en) * | 1985-03-21 | 1988-08-24 | Stc Plc | Photoconductor |
| JPS6254474A (ja) * | 1985-05-20 | 1987-03-10 | Sumitomo Electric Ind Ltd | 電界効果トランジスタ |
| JPH031547A (ja) * | 1989-05-29 | 1991-01-08 | Mitsubishi Electric Corp | 化合物半導体ｍｉｓ・ｆｅｔおよびその製造方法 |
| CN100455220C (zh) | 2000-09-12 | 2009-01-28 | 菲利根有限公司 | 烟草烟雾过滤器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
| FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| FR2469002A1 (fr) * | 1979-10-26 | 1981-05-08 | Thomson Csf | Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur |
| CA1145482A (en) * | 1979-12-28 | 1983-04-26 | Takashi Mimura | High electron mobility single heterojunction semiconductor device |
| FR2489045A1 (fr) * | 1980-08-20 | 1982-02-26 | Thomson Csf | Transistor a effet de champ gaas a memoire non volatile |
-
1981
- 1981-01-06 FR FR8100096A patent/FR2497603A1/fr active Granted
- 1981-12-31 EP EP81402096A patent/EP0055968A3/fr not_active Withdrawn
-
1982
- 1982-01-05 JP JP55582A patent/JPS57136375A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2497603A1 (fr) | 1982-07-09 |
| EP0055968A3 (fr) | 1982-08-04 |
| EP0055968A2 (fr) | 1982-07-14 |
| JPS57136375A (en) | 1982-08-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |