FR2496357A1 - Amplificateur hyperfrequence a deux transistors a effet de champ couples par reaction capacitive - Google Patents
Amplificateur hyperfrequence a deux transistors a effet de champ couples par reaction capacitive Download PDFInfo
- Publication number
- FR2496357A1 FR2496357A1 FR8026545A FR8026545A FR2496357A1 FR 2496357 A1 FR2496357 A1 FR 2496357A1 FR 8026545 A FR8026545 A FR 8026545A FR 8026545 A FR8026545 A FR 8026545A FR 2496357 A1 FR2496357 A1 FR 2496357A1
- Authority
- FR
- France
- Prior art keywords
- gate
- transistors
- amplifier
- transistor
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001939 inductive effect Effects 0.000 title abstract description 5
- 230000009977 dual effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 claims abstract description 14
- 238000001465 metallisation Methods 0.000 claims abstract description 13
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
- H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8026545A FR2496357A1 (fr) | 1980-12-15 | 1980-12-15 | Amplificateur hyperfrequence a deux transistors a effet de champ couples par reaction capacitive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8026545A FR2496357A1 (fr) | 1980-12-15 | 1980-12-15 | Amplificateur hyperfrequence a deux transistors a effet de champ couples par reaction capacitive |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2496357A1 true FR2496357A1 (fr) | 1982-06-18 |
| FR2496357B1 FR2496357B1 (cs) | 1984-04-06 |
Family
ID=9249077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8026545A Granted FR2496357A1 (fr) | 1980-12-15 | 1980-12-15 | Amplificateur hyperfrequence a deux transistors a effet de champ couples par reaction capacitive |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2496357A1 (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532497A (zh) * | 2013-10-18 | 2014-01-22 | 中国科学技术大学 | 一种采用电感补偿技术的超宽带低噪声放大器 |
-
1980
- 1980-12-15 FR FR8026545A patent/FR2496357A1/fr active Granted
Non-Patent Citations (2)
| Title |
|---|
| EXBK/77 * |
| EXBK/80 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532497A (zh) * | 2013-10-18 | 2014-01-22 | 中国科学技术大学 | 一种采用电感补偿技术的超宽带低噪声放大器 |
| CN103532497B (zh) * | 2013-10-18 | 2016-08-24 | 中国科学技术大学 | 一种采用电感补偿技术的超宽带低噪声放大器 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2496357B1 (cs) | 1984-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |