FR2494049B1 - - Google Patents
Info
- Publication number
- FR2494049B1 FR2494049B1 FR8121087A FR8121087A FR2494049B1 FR 2494049 B1 FR2494049 B1 FR 2494049B1 FR 8121087 A FR8121087 A FR 8121087A FR 8121087 A FR8121087 A FR 8121087A FR 2494049 B1 FR2494049 B1 FR 2494049B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
- H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55158732A JPS5783082A (en) | 1980-11-11 | 1980-11-11 | Two wave length semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2494049A1 FR2494049A1 (fr) | 1982-05-14 |
FR2494049B1 true FR2494049B1 (US06623731-20030923-C00012.png) | 1984-12-07 |
Family
ID=15678115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8121087A Granted FR2494049A1 (fr) | 1980-11-11 | 1981-11-10 | Laser a semiconducteurs |
Country Status (7)
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2525033B1 (fr) * | 1982-04-08 | 1986-01-17 | Bouadma Noureddine | Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation |
GB8325320D0 (en) * | 1983-09-21 | 1983-10-26 | Plessey Co Plc | Diamond heatsink assemblies |
US4607370A (en) * | 1984-02-29 | 1986-08-19 | California Institute Of Technology | Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers |
US4747107A (en) * | 1985-09-06 | 1988-05-24 | Bell Communications Research, Inc. | Single mode injection laser |
FR2605801B1 (fr) * | 1986-10-23 | 1989-03-03 | Menigaux Louis | Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu |
DE3708666C2 (de) * | 1987-03-17 | 1997-11-27 | Siemens Ag | Laseranordnung mit getrennt ansteuerbaren gekoppelten Halbleiterlasern |
NL8800509A (nl) * | 1988-02-29 | 1989-09-18 | Philips Nv | Tweedimensionaal laser array. |
DE58906978D1 (de) * | 1988-09-22 | 1994-03-24 | Siemens Ag | Abstimmbarer DFB-Laser. |
FR2706091B1 (fr) * | 1993-06-04 | 1995-07-21 | Thomson Csf | Laser semiconducteur bicolore. |
US6834068B2 (en) * | 2001-06-29 | 2004-12-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
US7382512B2 (en) * | 2005-10-26 | 2008-06-03 | Zhizhang Chen | Resistivity phase change material |
US10389090B2 (en) | 2017-11-21 | 2019-08-20 | International Business Machines Corporation | Lateral growth of edge-emitting lasers |
JP7073121B2 (ja) * | 2018-01-31 | 2022-05-23 | 日本ルメンタム株式会社 | 光送信サブアセンブリ及び光モジュール |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611069A (en) * | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
JPS52155078A (en) * | 1976-06-18 | 1977-12-23 | Toshiba Corp | Semiconductor light emitting device |
-
1980
- 1980-11-11 JP JP55158732A patent/JPS5783082A/ja active Pending
-
1981
- 1981-11-02 US US06/317,592 patent/US4426704A/en not_active Expired - Lifetime
- 1981-11-10 DE DE19813144628 patent/DE3144628A1/de active Granted
- 1981-11-10 GB GB8133931A patent/GB2089108B/en not_active Expired
- 1981-11-10 FR FR8121087A patent/FR2494049A1/fr active Granted
- 1981-11-10 NL NL8105069A patent/NL190943C/xx not_active IP Right Cessation
- 1981-11-12 CA CA000389957A patent/CA1171506A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1171506A (en) | 1984-07-24 |
US4426704A (en) | 1984-01-17 |
GB2089108B (en) | 1984-03-21 |
NL8105069A (nl) | 1982-06-01 |
DE3144628A1 (de) | 1982-06-16 |
FR2494049A1 (fr) | 1982-05-14 |
NL190943B (nl) | 1994-06-01 |
GB2089108A (en) | 1982-06-16 |
JPS5783082A (en) | 1982-05-24 |
NL190943C (nl) | 1994-11-01 |
DE3144628C2 (US06623731-20030923-C00012.png) | 1987-10-15 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address |