FR2494049B1 - - Google Patents

Info

Publication number
FR2494049B1
FR2494049B1 FR8121087A FR8121087A FR2494049B1 FR 2494049 B1 FR2494049 B1 FR 2494049B1 FR 8121087 A FR8121087 A FR 8121087A FR 8121087 A FR8121087 A FR 8121087A FR 2494049 B1 FR2494049 B1 FR 2494049B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8121087A
Other languages
French (fr)
Other versions
FR2494049A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2494049A1 publication Critical patent/FR2494049A1/fr
Application granted granted Critical
Publication of FR2494049B1 publication Critical patent/FR2494049B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4043Edge-emitting structures with vertically stacked active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203Transistor-type lasers
    • H01S5/06206Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • H01S5/2275Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8121087A 1980-11-11 1981-11-10 Laser a semiconducteurs Granted FR2494049A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158732A JPS5783082A (en) 1980-11-11 1980-11-11 Two wave length semiconductor laser device

Publications (2)

Publication Number Publication Date
FR2494049A1 FR2494049A1 (fr) 1982-05-14
FR2494049B1 true FR2494049B1 (US06623731-20030923-C00012.png) 1984-12-07

Family

ID=15678115

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8121087A Granted FR2494049A1 (fr) 1980-11-11 1981-11-10 Laser a semiconducteurs

Country Status (7)

Country Link
US (1) US4426704A (US06623731-20030923-C00012.png)
JP (1) JPS5783082A (US06623731-20030923-C00012.png)
CA (1) CA1171506A (US06623731-20030923-C00012.png)
DE (1) DE3144628A1 (US06623731-20030923-C00012.png)
FR (1) FR2494049A1 (US06623731-20030923-C00012.png)
GB (1) GB2089108B (US06623731-20030923-C00012.png)
NL (1) NL190943C (US06623731-20030923-C00012.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
GB8325320D0 (en) * 1983-09-21 1983-10-26 Plessey Co Plc Diamond heatsink assemblies
US4607370A (en) * 1984-02-29 1986-08-19 California Institute Of Technology Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers
US4747107A (en) * 1985-09-06 1988-05-24 Bell Communications Research, Inc. Single mode injection laser
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
DE3708666C2 (de) * 1987-03-17 1997-11-27 Siemens Ag Laseranordnung mit getrennt ansteuerbaren gekoppelten Halbleiterlasern
NL8800509A (nl) * 1988-02-29 1989-09-18 Philips Nv Tweedimensionaal laser array.
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
FR2706091B1 (fr) * 1993-06-04 1995-07-21 Thomson Csf Laser semiconducteur bicolore.
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US7382512B2 (en) * 2005-10-26 2008-06-03 Zhizhang Chen Resistivity phase change material
US10389090B2 (en) 2017-11-21 2019-08-20 International Business Machines Corporation Lateral growth of edge-emitting lasers
JP7073121B2 (ja) * 2018-01-31 2022-05-23 日本ルメンタム株式会社 光送信サブアセンブリ及び光モジュール

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Also Published As

Publication number Publication date
CA1171506A (en) 1984-07-24
US4426704A (en) 1984-01-17
GB2089108B (en) 1984-03-21
NL8105069A (nl) 1982-06-01
DE3144628A1 (de) 1982-06-16
FR2494049A1 (fr) 1982-05-14
NL190943B (nl) 1994-06-01
GB2089108A (en) 1982-06-16
JPS5783082A (en) 1982-05-24
NL190943C (nl) 1994-11-01
DE3144628C2 (US06623731-20030923-C00012.png) 1987-10-15

Similar Documents

Publication Publication Date Title
FR2473077B1 (US06623731-20030923-C00012.png)
FR2475542B1 (US06623731-20030923-C00012.png)
FR2473871B1 (US06623731-20030923-C00012.png)
FR2473575B1 (US06623731-20030923-C00012.png)
FR2473132B1 (US06623731-20030923-C00012.png)
FR2494293B1 (US06623731-20030923-C00012.png)
FR2473725B1 (US06623731-20030923-C00012.png)
FR2474192B1 (US06623731-20030923-C00012.png)
FR2473796B1 (US06623731-20030923-C00012.png)
FR2494049B1 (US06623731-20030923-C00012.png)
DE3115054C2 (US06623731-20030923-C00012.png)
FR2474716B1 (US06623731-20030923-C00012.png)
FR2474379B3 (US06623731-20030923-C00012.png)
DE3153720A1 (US06623731-20030923-C00012.png)
FR2473780B1 (US06623731-20030923-C00012.png)
FR2473189B1 (US06623731-20030923-C00012.png)
FR2473188B1 (US06623731-20030923-C00012.png)
FR2473058B1 (US06623731-20030923-C00012.png)
FR2474325B3 (US06623731-20030923-C00012.png)
FR2473183B1 (US06623731-20030923-C00012.png)
CH655579B (US06623731-20030923-C00012.png)
FR2475521B3 (US06623731-20030923-C00012.png)
FR2473925B1 (US06623731-20030923-C00012.png)
FR2475588B1 (US06623731-20030923-C00012.png)
FR2473563B1 (US06623731-20030923-C00012.png)

Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address