FR2489045B1 - - Google Patents
Info
- Publication number
- FR2489045B1 FR2489045B1 FR8018186A FR8018186A FR2489045B1 FR 2489045 B1 FR2489045 B1 FR 2489045B1 FR 8018186 A FR8018186 A FR 8018186A FR 8018186 A FR8018186 A FR 8018186A FR 2489045 B1 FR2489045 B1 FR 2489045B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8018186A FR2489045A1 (fr) | 1980-08-20 | 1980-08-20 | Transistor a effet de champ gaas a memoire non volatile |
| EP81401224A EP0046422B1 (fr) | 1980-08-20 | 1981-07-29 | Transistor à effet de champ GaAs à mémoire non-volatile |
| DE8181401224T DE3172902D1 (en) | 1980-08-20 | 1981-07-29 | Gaas field-effect transistor with non volatile memory |
| US06/294,382 US4450462A (en) | 1980-08-20 | 1981-08-19 | GaAs Field effect transistor with a non-volatile memory |
| JP56129471A JPS5771182A (en) | 1980-08-20 | 1981-08-20 | Gallium arsenide field effect transistor with non-volatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8018186A FR2489045A1 (fr) | 1980-08-20 | 1980-08-20 | Transistor a effet de champ gaas a memoire non volatile |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2489045A1 FR2489045A1 (fr) | 1982-02-26 |
| FR2489045B1 true FR2489045B1 (enExample) | 1985-05-17 |
Family
ID=9245291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8018186A Granted FR2489045A1 (fr) | 1980-08-20 | 1980-08-20 | Transistor a effet de champ gaas a memoire non volatile |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4450462A (enExample) |
| EP (1) | EP0046422B1 (enExample) |
| JP (1) | JPS5771182A (enExample) |
| DE (1) | DE3172902D1 (enExample) |
| FR (1) | FR2489045A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2497603A1 (fr) * | 1981-01-06 | 1982-07-09 | Thomson Csf | Transistor a faible temps de commutation, de type normalement bloquant |
| JPS58178572A (ja) * | 1982-04-14 | 1983-10-19 | Hiroyuki Sakaki | 移動度変調形電界効果トランジスタ |
| US4739385A (en) * | 1982-10-21 | 1988-04-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Modulation-doped photodetector |
| JPS59177970A (ja) * | 1983-03-28 | 1984-10-08 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPS6052060A (ja) * | 1983-08-31 | 1985-03-23 | Masataka Inoue | 電界効果トランジスタ |
| US4791072A (en) * | 1984-06-15 | 1988-12-13 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for making a complementary device containing MODFET |
| US4550330A (en) * | 1984-06-29 | 1985-10-29 | International Business Machines Corporation | Semiconductor interferometer |
| US4641161A (en) * | 1984-09-28 | 1987-02-03 | Texas Instruments Incorporated | Heterojunction device |
| US4901279A (en) * | 1988-06-20 | 1990-02-13 | International Business Machines Corporation | MESFET sram with power saving current-limiting transistors |
| US4982248A (en) * | 1989-01-11 | 1991-01-01 | International Business Machines Corporation | Gated structure for controlling fluctuations in mesoscopic structures |
| US5180681A (en) * | 1990-03-15 | 1993-01-19 | North Carolina State University | Method of making high current, high voltage breakdown field effect transistor |
| US5084743A (en) * | 1990-03-15 | 1992-01-28 | North Carolina State University At Raleigh | High current, high voltage breakdown field effect transistor |
| KR100402784B1 (ko) * | 2000-12-22 | 2003-10-22 | 한국전자통신연구원 | 저온 측정용 갈륨비소 반도체 소자 및 그 제조방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075652A (en) * | 1974-04-17 | 1978-02-21 | Matsushita Electronics Corporation | Junction gate type gaas field-effect transistor and method of forming |
| US4111725A (en) * | 1977-05-06 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Selective lift-off technique for fabricating gaas fets |
| US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
| JPS54145486A (en) * | 1978-05-08 | 1979-11-13 | Handotai Kenkyu Shinkokai | Gaas semiconductor device |
| JPS5558576A (en) * | 1978-10-26 | 1980-05-01 | Nec Corp | Mis structure semiconductor device |
| FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| FR2469002A1 (fr) * | 1979-10-26 | 1981-05-08 | Thomson Csf | Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur |
-
1980
- 1980-08-20 FR FR8018186A patent/FR2489045A1/fr active Granted
-
1981
- 1981-07-29 EP EP81401224A patent/EP0046422B1/fr not_active Expired
- 1981-07-29 DE DE8181401224T patent/DE3172902D1/de not_active Expired
- 1981-08-19 US US06/294,382 patent/US4450462A/en not_active Expired - Fee Related
- 1981-08-20 JP JP56129471A patent/JPS5771182A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4450462A (en) | 1984-05-22 |
| EP0046422B1 (fr) | 1985-11-13 |
| JPS5771182A (en) | 1982-05-01 |
| EP0046422A1 (fr) | 1982-02-24 |
| FR2489045A1 (fr) | 1982-02-26 |
| DE3172902D1 (en) | 1985-12-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |