DE3172902D1 - Gaas field-effect transistor with non volatile memory - Google Patents

Gaas field-effect transistor with non volatile memory

Info

Publication number
DE3172902D1
DE3172902D1 DE8181401224T DE3172902T DE3172902D1 DE 3172902 D1 DE3172902 D1 DE 3172902D1 DE 8181401224 T DE8181401224 T DE 8181401224T DE 3172902 T DE3172902 T DE 3172902T DE 3172902 D1 DE3172902 D1 DE 3172902D1
Authority
DE
Germany
Prior art keywords
volatile memory
effect transistor
non volatile
gaas field
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181401224T
Other languages
German (de)
English (en)
Inventor
Trong Linh Nuyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3172902D1 publication Critical patent/DE3172902D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
DE8181401224T 1980-08-20 1981-07-29 Gaas field-effect transistor with non volatile memory Expired DE3172902D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8018186A FR2489045A1 (fr) 1980-08-20 1980-08-20 Transistor a effet de champ gaas a memoire non volatile

Publications (1)

Publication Number Publication Date
DE3172902D1 true DE3172902D1 (en) 1985-12-19

Family

ID=9245291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181401224T Expired DE3172902D1 (en) 1980-08-20 1981-07-29 Gaas field-effect transistor with non volatile memory

Country Status (5)

Country Link
US (1) US4450462A (enExample)
EP (1) EP0046422B1 (enExample)
JP (1) JPS5771182A (enExample)
DE (1) DE3172902D1 (enExample)
FR (1) FR2489045A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2497603A1 (fr) * 1981-01-06 1982-07-09 Thomson Csf Transistor a faible temps de commutation, de type normalement bloquant
JPS58178572A (ja) * 1982-04-14 1983-10-19 Hiroyuki Sakaki 移動度変調形電界効果トランジスタ
US4739385A (en) * 1982-10-21 1988-04-19 American Telephone And Telegraph Company, At&T Bell Laboratories Modulation-doped photodetector
JPS59177970A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置及びその製造方法
JPS6052060A (ja) * 1983-08-31 1985-03-23 Masataka Inoue 電界効果トランジスタ
US4791072A (en) * 1984-06-15 1988-12-13 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making a complementary device containing MODFET
US4550330A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Semiconductor interferometer
US4641161A (en) * 1984-09-28 1987-02-03 Texas Instruments Incorporated Heterojunction device
US4901279A (en) * 1988-06-20 1990-02-13 International Business Machines Corporation MESFET sram with power saving current-limiting transistors
US4982248A (en) * 1989-01-11 1991-01-01 International Business Machines Corporation Gated structure for controlling fluctuations in mesoscopic structures
US5180681A (en) * 1990-03-15 1993-01-19 North Carolina State University Method of making high current, high voltage breakdown field effect transistor
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
KR100402784B1 (ko) * 2000-12-22 2003-10-22 한국전자통신연구원 저온 측정용 갈륨비소 반도체 소자 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
JPS5558576A (en) * 1978-10-26 1980-05-01 Nec Corp Mis structure semiconductor device
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2469002A1 (fr) * 1979-10-26 1981-05-08 Thomson Csf Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur

Also Published As

Publication number Publication date
US4450462A (en) 1984-05-22
EP0046422B1 (fr) 1985-11-13
JPS5771182A (en) 1982-05-01
EP0046422A1 (fr) 1982-02-24
FR2489045A1 (fr) 1982-02-26
FR2489045B1 (enExample) 1985-05-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee