FR2489043A1 - Attaching semiconductor wafer to housing base plate - brazing or soldering using screen printed paste of braze metal or solder - Google Patents
Attaching semiconductor wafer to housing base plate - brazing or soldering using screen printed paste of braze metal or solder Download PDFInfo
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- FR2489043A1 FR2489043A1 FR8018188A FR8018188A FR2489043A1 FR 2489043 A1 FR2489043 A1 FR 2489043A1 FR 8018188 A FR8018188 A FR 8018188A FR 8018188 A FR8018188 A FR 8018188A FR 2489043 A1 FR2489043 A1 FR 2489043A1
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- Prior art keywords
- gold
- paste
- component
- solder
- soldering
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910000679 solder Inorganic materials 0.000 title claims description 14
- 238000005476 soldering Methods 0.000 title claims description 11
- 238000005219 brazing Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000001465 metallisation Methods 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 24
- 239000008188 pellet Substances 0.000 claims description 16
- 238000007650 screen-printing Methods 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 239000011572 manganese Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000010411 cooking Methods 0.000 claims 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 230000011664 signaling Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000010603 pastilles Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
Description
La présente invention concerne une embase de boitier d'encapsulation pour les dispositifs semi-conducteurs, et plus précisément les métallisations localisées, déposées sur l'embase, sur laquelle sont fixées la ou les pastilles de semi-conducteurs. The present invention relates to an encapsulation box base for semiconductor devices, and more precisely to the localized metallizations, deposited on the base, on which the semiconductor chip (s) are fixed.
L'invention concerne également le procédé de report des pastilles de semi-conducteurs sur l'embase de boitier. The invention also relates to the method for transferring semiconductor pellets to the housing base.
L'invention est applicable à tous les dispositifs semi-conducteurs, de signal ou de puissance, en raison de la simplification qu'elle apporte aux opérations de montage en boitiers, mais elle est plus particulièrement intéressante dans le cas des dispositifs semi-conducteurs à haute fréquence. The invention is applicable to all semiconductor devices, signal or power, because of the simplification it brings to assembly operations in packages, but it is more particularly advantageous in the case of semiconductor devices with high frequency.
On sait en effet qu'en très haute fréquence, les longueurs de liaisons entre les composants ont une influence sur les caractéristiques des dispositifs, telle que la bande passante, et que par conséquent, il importe que les composants comme les pastilles de semi-conducteurs ou les condensateurs de liaison, soient parfaitement positionnés. L'invention facilite le positionnement des composants à l'intérieur du boitier et donc contribue à la régularité et à l'optimisation des longueurs de liaisons.It is known in fact that at very high frequency, the lengths of links between the components have an influence on the characteristics of the devices, such as the bandwidth, and that therefore, it is important that the components such as the semiconductor wafers or the connecting capacitors, are perfectly positioned. The invention facilitates the positioning of the components inside the housing and therefore contributes to the regularity and to the optimization of the connection lengths.
En outre, et surtout dans le cas des composants de puissance, il est fréquent de rapporter la pastille sur l'embase au moyen d'une préforme de brasure, c'est à dire au moyen d'une pièce intermédiaire qui a elle même la forme du composant à braser. Cette opération ne présente aucune difficulté dans les cas classiques des transistors ou de façon plus générale des composants fonctionnant à de basses fréquences; elle est plus délicate lorsqu'une pastille doit être brasée avec une position précise, et elle devient très aléatoire lorsque plusieurs pastilles et par conséquent plusieurs préformes, doivent être brasées simultanément sur une même embase pour réaliser un composant de puissance dont toutes les pastilles sont parfaitement positionnées.L'invention, par ce second aspect, permet de braser facilement plusieurs composants de façon précise sur une même embase et par une même opération sans préforme de brasure. In addition, and especially in the case of power components, it is common to attach the patch to the base by means of a brazing preform, that is to say by means of an intermediate piece which itself has the shape of the component to be brazed. This operation presents no difficulty in the classic cases of transistors or more generally of components operating at low frequencies; it is more delicate when a patch must be soldered with a precise position, and it becomes very random when several pellets and consequently several preforms, must be soldered simultaneously on the same base to produce a power component of which all the pellets are perfectly The invention, by this second aspect, makes it possible to easily braze several components precisely on the same base and by the same operation without a brazing preform.
Ainsi l'invention remplace la dorure électrolytique classique de la totalité de l'embase d'un boitier et la préforme de brasure par une métallisation localisée à base d'or ou d'alliage d'or, déposée en couche épaisse par sérigraphie, de façon très précise aux endroits où doivent être brasés les composants sur l'embase du boitier: la brasure des pastilles se fait ensuite directement sur la métallisation épaisse qui remplace les préformes. Thus the invention replaces the conventional electrolytic gilding of the entire base of a case and the solder preform by a localized metallization based on gold or gold alloy, deposited in a thick layer by screen printing, very precisely at the places where the components must be soldered on the base of the case: the soldering of the pellets is then done directly on the thick metallization which replaces the preforms.
De façon plus précise, l'invention concerne une embase de boitier d'encapsulation pour dispositif semi-conducteur, comportant au moins une plage métallisée sur laquelle doit être rapportée dans une position précise et par brasure au moins une pastille de composant, cette embase étant caractérisée en ce que la brasure du composant est assurée par dépôt sur la plage métallisée, par sérigraphie, d'une pâte d'or, dépôt localisé et limité au contour de la pastille de composant. More specifically, the invention relates to an encapsulation box base for a semiconductor device, comprising at least one metallized area to which must be attached in a precise position and by soldering at least one component pad, this base being characterized in that the soldering of the component is ensured by deposition on the metallized surface, by screen printing, of a gold paste, localized deposition and limited to the contour of the component pellet.
L'invention sera mieux comprise par l'explication d'un exemple de réalisation qui suit, laquelle s'appuie sur les figures qui représentent:
Figure 1 une vue dans l'espace et en éclaté d'une embase de boitier d'encapsulation sur laquelle doivent être brasés plusieurs composants.The invention will be better understood by the explanation of an exemplary embodiment which follows, which is based on the figures which represent:
Figure 1 a view in space and exploded of an encapsulation box base on which must be soldered several components.
Figure 2 une vue en plan de l'embase précédente montrant les métallisations localisées selon l'invention. Figure 2 a plan view of the previous base showing the localized metallizations according to the invention.
L'invention est applicable à de nombreux types de boitiers d'encapsulation, simples ou complexes, ne comportant qu'un seul composant par boitier ou une pluralité de composants fixés sur une même embase, les pastilles étant brasées directement sur l'embase ou isolées par l'intermédiaire d'un "pavé" d'un matériau tel que l'oxyde de bérylium ou l'alumine. Cependant l'invention trouve son principal intérêt dans les cas complexes et c'est pourquoi l'invention sera décrite en s'appuyant sur l'exemple non limitatif d'un dispositif à haute fréquence comportant une pluralité de pastilles fixées sur une même embase. The invention is applicable to many types of encapsulation boxes, simple or complex, comprising only one component per box or a plurality of components fixed on the same base, the pellets being brazed directly on the base or insulated via a "block" of a material such as berylium oxide or alumina. However, the invention finds its main interest in complex cases and this is why the invention will be described by relying on the nonlimiting example of a high frequency device comprising a plurality of pads fixed on the same base.
C'est ce que représente la figure 1 qui montre comment quatre pastilles sont fixées sur une embase selon l'art connu. This is shown in Figure 1 which shows how four pads are fixed to a base according to the known art.
De façon à faciliter la lecture de la figure 1 celle-ci a été éclatée dans l'espace et elle représente une embase de boitier 1, sur laquelle est brasé un pavé isolant d'oxyde de bérylium ou d'alumine, pavé qui lui même a
reçu des métallisations 3, 4, 3 et 6. Ces métallisations servent à fixer les
pastilles de semi-conducteurs ou de composants d'accords tel que des
condensateurs; elles servent également à fixer la grille de connection
extérieure qui n'est pas représentée sur cette figure, et enfin à recevoir les
extrémités des fils de connexions intérieures qui sont brasés d'une part sur
les pastilles de semi-conducteurs et d'autre part sur l'une des métallisations
en contact avec les connexions extérieures.Pour fixer les idées, et sans que
ceci ne soit limitatif, la métallisation 3 est une métallisation qui reçoit les
connexions de base, les métallisations 4 et 5 reçoivent les connexions
d'émetteur, et la ou les pastilles sont brasées sur la métallisation 6 qui est
donc en contact avec les collecteurs. Comme il a été dit, une ou plusieurs
pastilles peuvent être brasées: sur la figure 1 sont représentées quatre
pastilles 7 qui sont brasées sur la métallisation 6 au moyen de quatre
préformes de brasure 8. Sur la métallisation 6 sont représentés en pointillés
les emplacements sur lesquels les pastilles sont brasées.In order to facilitate the reading of Figure 1 it has been exploded in space and it represents a base of box 1, on which is brazed an insulating block of berylium oxide or alumina, which block itself at
received metallizations 3, 4, 3 and 6. These metallizations serve to fix the
semiconductor wafers or chord components such as
capacitors; they are also used to fix the connection grid
which is not shown in this figure, and finally to receive the
ends of the internal connection wires which are soldered on the one hand to
semiconductor wafers and on the other hand on one of the metallizations
in contact with external connections. To fix ideas, and without
this is not limiting, metallization 3 is a metallization which receives the
basic connections, metallizations 4 and 5 receive the connections
emitter, and the pad (s) are brazed on metallization 6 which is
therefore in contact with collectors. As has been said, one or more
pads can be soldered: in figure 1 are represented four
pads 7 which are soldered to metallization 6 by means of four
brazing preforms 8. On the metallization 6 are shown in dotted lines
the locations on which the pellets are brazed.
La brasure de plusieurs pastilles de semi-conducteurs dans une position
précise et repérée d'avance, au moyen de plusieurs préformes de brasure,
pose une difficulté de réalisation pratique: la moindre vibration de l'appa
reil ou de l'opérateur qui doit braser simultanément les quatre empilements
pastilles sur préformes amène un taux de déchet relativement important
parce qu'il y a fréquemment une pastille au moins qui n'est pas brasée dans
une bonne position.Soldering of several semiconductor wafers in one position
precise and identified in advance, by means of several solder preforms,
poses a difficulty in practical realization: the slightest vibration of the device
reil or the operator who must braze all four stacks simultaneously
pellets on preforms leads to a relatively high waste rate
because there is frequently at least one pellet which is not soldered in
a good position.
En outre les métallisations sont classiquement réalisées par dépôts de
molybdène/manganèse sur le pavé isolant 2, ce dépôt étant ensuite nickelé
et doré sur la totalité des quatre métallisations représentées, l'épaisseur d'or étant comprise entre deux et demi et cinq microns. La dorure totale d'une
embase, non seulement ne donne pas la position précise à laquelle doivent
être brasées les pastilles mais en outre présente un aspect qui n'est pas
industriel puisque sont dorées même les parties de métallisations sur
lesquelles sont ensuite rapportées les grilles de connexions extérieures, et la
dorure à ces endroits là est inutile.In addition, the metallizations are conventionally carried out by deposits of
molybdenum / manganese on the insulating block 2, this deposit then being nickel-plated
and gilded on all of the four metallizations shown, the thickness of gold being between two and a half and five microns. The total gilding of a
not only does not give the precise position to which
be soldered the pellets but also has an aspect which is not
industrial since even the parts of metallization are golden on
which are then reported the external connection grids, and the
gilding in these places is useless.
L'invention apporte une solution logique au double problème de la
dorure des métallisations aux seuls endroits où cela est nécessaire, et à la
position parfaitement repérée des préformes de brasure : celles-ci sont remplacées par des métallisations localisées déposées par sérigraphie ou par tout autre procédé comparable.The invention provides a logical solution to the double problem of
gilding of metallizations only where necessary, and at the
perfectly identified position of the solder preforms: these are replaced by localized metallizations deposited by screen printing or by any other comparable process.
La figure 2 illustre l'invention et pour faciliter la comparaison avec l'art antérieur de la figure 1, la même configuration des métallisations a été reprise. Figure 2 illustrates the invention and to facilitate comparison with the prior art of Figure 1, the same configuration of metallizations has been repeated.
La figure 2 représente la face supérieure d'une embase, limitée par les bords du pavé isolant 2, qui a reçu les métallisations 3, 4, 5 et 6, réalisées par dépôt de molybdène/manganèse puis dépôt de nickel. L'opération de dorure généralisée sur cinq microns d'épaisseur environ par un procédé électrolytique, est remplacée par une opération de dorure localisée par sérigraphie, aux seuls endroits repérés 9 ou doivent être brasées la ou les pastilles. Le dépôt d'or ou d'alliage d'or sur les surfaces 9 crée une épaisseur de l'ordre de 20 microns, épaisseur supérieure à l'épaisseur d'or dans le cas de la dorure électrolytique généralisée, mais il en résulte néanmoins une économie d'or par rapport au procédé antérieur.En outre étant donné que la sérigraphie est un procédé qui permet un repèrage extrêmement précis, ce dépôt d'or épais sur les surfaces 9 est lui-même très précis et facilite la brasure des pastilles qui, même si elles sont présentées dans une position légèrement différente de la position recherchée, prennent automatiquement leur place par suite des forces capillaires entre l'or fondu et la face inférieure de la pastille. FIG. 2 represents the upper face of a base, bounded by the edges of the insulating block 2, which has received the metallizations 3, 4, 5 and 6, produced by deposition of molybdenum / manganese then deposition of nickel. The gilding operation, generalized over approximately five microns in thickness by an electrolytic process, is replaced by a gilding operation located by screen printing, in the only places marked 9 where the patch (s) must be soldered. The deposition of gold or gold alloy on the surfaces 9 creates a thickness of the order of 20 microns, a thickness greater than the thickness of gold in the case of generalized electrolytic gilding, but it nevertheless results therefrom. a saving of gold compared to the previous process. In addition since screen printing is a process which allows an extremely precise location, this deposit of thick gold on the surfaces 9 is itself very precise and facilitates the soldering of the pellets which, even if they are presented in a position slightly different from the desired position, automatically take their place due to the capillary forces between the molten gold and the underside of the pellet.
Le dépôt d'or par sérigraphie est un procédé industriel, il se situe après le frittage à 15000 de la métallisation molybdène/manganèse déposée sur le pavé isolant selon un dessin précis. La métallisation est ensuite recouverte de nickel chimique et non pas électrolytique comme dans les procédés précédents. La pâte sérigraphique d'or est étuvée à une température voisine de 100 à 1200 pour faciliter le séchage et l'évaporation des solvants, et la cuisson définitive de la pâte à base d'or est effectuée à une température comprise entre 800 et 850 #, pendant dix à trente minutes, en même temps que l'assemblage du boitier par brasure. Il en ressort que le procédé de report des composants selon l'invention est extrêmement facile à mettre en oeuvre du point de vue industriel et présente l'avantage d'un positionnement précis puisque à partir d'une embase sur laquelle les métallisations molybdène/manganèse puis nickel ont été réalisées, il suffit de déposer une couche d'or épaisse par sérigraphie puis déposer sur ces emplacements la ou les pastilles à braser et réaliser une brasure par passage au four. The deposition of gold by screen printing is an industrial process, it takes place after sintering at 15,000 of the molybdenum / manganese metallization deposited on the insulating block according to a precise drawing. The metallization is then covered with chemical and not electrolytic nickel as in the previous processes. The gold screen printing paste is steamed at a temperature close to 100 to 1200 to facilitate the drying and evaporation of the solvents, and the final baking of the gold-based paste is carried out at a temperature between 800 and 850 # , for ten to thirty minutes, at the same time as the assembly of the case by soldering. It appears that the process for transferring the components according to the invention is extremely easy to implement from an industrial point of view and has the advantage of precise positioning since from a base on which the molybdenum / manganese metallizations then nickel was produced, it suffices to deposit a thick layer of gold by screen printing then deposit on these locations the pastille (s) to be brazed and make a solder by passage in the oven.
La pâte sérigraphique n'est pas obligatoirement à base d'or pur : il est facile d'utiliser, selon ce que l'on désire assembler et selon les caractéristiques demandées au dispositif, des pâtes or/étain, or/germanium, or/silicium ou plomb/étain, plomb/argent/indium, par exemple, sans que ceci soit limitatif. De façon générale conviennent toutes les pâtes connues sous la dénomination de brasures tendres, à point de fusion inférieur à 650 C, et qui contiennent, outre les solvants, un ou plusieurs alliages de métaux. The screen printing paste is not necessarily based on pure gold: it is easy to use, depending on what you want to assemble and according to the characteristics requested of the device, gold / tin, gold / germanium, or gold / silicon or lead / tin, lead / silver / indium, for example, without this being limiting. Generally speaking, all pastes known under the name of soft solders, with a melting point below 650 ° C., which contain, in addition to the solvents, one or more metal alloys are suitable.
L'invention, outre l'avantage de positionner très précisement plusieurs semi-conducteurs sur une même embase dans un même boitier en les plaçant sur les plages d'or sérigraphiées, présente plusieurs avantages. The invention, in addition to the advantage of very precisely positioning several semiconductors on the same base in the same housing by placing them on the gold screen-printed ranges, has several advantages.
Elle évite l'utilisation de préformes de brasure du fait de l'épaisseur d'or déposée localement, de l'ordre de 10 à 20 microns. It avoids the use of solder preforms because of the thickness of gold deposited locally, of the order of 10 to 20 microns.
Elle supprime les coulées de brasure lors du report et par conséquent elle facilite les inter-connexions ultérieures, la soudure ultra-sons de fils d'or directement sur le nickel de métallisation ne posant pas de problèmes industriels. It eliminates the solder flows during the transfer and therefore it facilitates subsequent interconnections, the ultrasonic welding of gold wires directly on the metallization nickel posing no industrial problems.
Elle permet en outre de maitriser la qualité de la brasure du semiconducteur sur l'embase en réglant l'épaisseur de la pâe déposée par sérigraphie. It also makes it possible to control the quality of the solder of the semiconductor on the base by adjusting the thickness of the paste deposited by screen printing.
Elle évite certains phénomènes annexes de report tels que des mauvais contacts ohmiques sur la partie postérieure des pastilles puisqu'il est possible de doper la pâte à base d'or avec des impuretés telles que l'antimoine, l'arsenic ou d'autres. It avoids certain additional phenomena of postponement such as poor ohmic contacts on the rear part of the pellets since it is possible to boost the gold-based paste with impurities such as antimony, arsenic or others.
Elle permet l'utilisation de semi-conducteurs ayant subi un traitement de la face postérieure très simple puisqu'il suffit d'une couche ultra-mince d'or déposée par évaporation. It allows the use of semiconductors having undergone a very simple treatment of the posterior surface since it suffices with an ultra-thin layer of gold deposited by evaporation.
Elle augmente la fiabilité des boitiers en évitant les dépôts électrolytiques qui s'accompagnent toujours d'impuretés gazeuses voir même liquides, lesquelles désorbent lors des chauffages ultérieurs en donnant naissance à des piqûres et quelquefois à des boursouflures. It increases the reliability of the boxes by avoiding electrolytic deposits which are always accompanied by gaseous impurities, even liquid, which desorb during subsequent heating, giving rise to pitting and sometimes to blisters.
Elle améliore la résistance thermique du dispositif par une meilleure maîtrise de la brasure des pastilles. It improves the thermal resistance of the device by better controlling the soldering of the pellets.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8018188A FR2489043A1 (en) | 1980-08-20 | 1980-08-20 | Attaching semiconductor wafer to housing base plate - brazing or soldering using screen printed paste of braze metal or solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8018188A FR2489043A1 (en) | 1980-08-20 | 1980-08-20 | Attaching semiconductor wafer to housing base plate - brazing or soldering using screen printed paste of braze metal or solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2489043A1 true FR2489043A1 (en) | 1982-02-26 |
Family
ID=9245292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8018188A Pending FR2489043A1 (en) | 1980-08-20 | 1980-08-20 | Attaching semiconductor wafer to housing base plate - brazing or soldering using screen printed paste of braze metal or solder |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2489043A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0246744A2 (en) * | 1986-05-20 | 1987-11-25 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2235752A1 (en) * | 1973-07-06 | 1975-01-31 | Honeywell Bull Soc Ind | Indium-lead solder for gold - useful for semiconductor devices |
-
1980
- 1980-08-20 FR FR8018188A patent/FR2489043A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2235752A1 (en) * | 1973-07-06 | 1975-01-31 | Honeywell Bull Soc Ind | Indium-lead solder for gold - useful for semiconductor devices |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/71 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0246744A2 (en) * | 1986-05-20 | 1987-11-25 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
| EP0246744A3 (en) * | 1986-05-20 | 1989-06-14 | Kabushiki Kaisha Toshiba | Ic card and method of manufacturing the same |
| US4997791A (en) * | 1986-05-20 | 1991-03-05 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
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