FR2487864A1 - Dispositif pour la croissance des monocristaux en groupe - Google Patents
Dispositif pour la croissance des monocristaux en groupe Download PDFInfo
- Publication number
- FR2487864A1 FR2487864A1 FR8017191A FR8017191A FR2487864A1 FR 2487864 A1 FR2487864 A1 FR 2487864A1 FR 8017191 A FR8017191 A FR 8017191A FR 8017191 A FR8017191 A FR 8017191A FR 2487864 A1 FR2487864 A1 FR 2487864A1
- Authority
- FR
- France
- Prior art keywords
- mono
- cylindrical block
- conduits
- tube
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 239000000956 alloy Substances 0.000 title claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 7
- 238000005266 casting Methods 0.000 title 1
- 238000004857 zone melting Methods 0.000 title 1
- 238000002425 crystallisation Methods 0.000 claims description 18
- 230000008025 crystallization Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000002826 coolant Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000005057 refrigeration Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 238000003303 reheating Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8017191A FR2487864A1 (fr) | 1980-08-04 | 1980-08-04 | Dispositif pour la croissance des monocristaux en groupe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8017191A FR2487864A1 (fr) | 1980-08-04 | 1980-08-04 | Dispositif pour la croissance des monocristaux en groupe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2487864A1 true FR2487864A1 (fr) | 1982-02-05 |
| FR2487864B1 FR2487864B1 (enExample) | 1985-03-22 |
Family
ID=9244861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8017191A Granted FR2487864A1 (fr) | 1980-08-04 | 1980-08-04 | Dispositif pour la croissance des monocristaux en groupe |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2487864A1 (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2011474A1 (enExample) * | 1969-03-13 | 1970-11-19 | ||
| FR2218939A1 (en) * | 1973-02-23 | 1974-09-20 | Petrov Dmitry | Monocrystalline metal products mfr - in a two cavity mould |
-
1980
- 1980-08-04 FR FR8017191A patent/FR2487864A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2011474A1 (enExample) * | 1969-03-13 | 1970-11-19 | ||
| FR2218939A1 (en) * | 1973-02-23 | 1974-09-20 | Petrov Dmitry | Monocrystalline metal products mfr - in a two cavity mould |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2487864B1 (enExample) | 1985-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH11189495A (ja) | シリコン単結晶及びその製造方法 | |
| FR2590076A1 (fr) | Dispositif capteur d'image du type etat solide avec repartition uniforme d'agent de dopage, et son procede de production | |
| FR2465802A1 (fr) | Procede de solidification d'un fluide tel qu'un bain de silicium et procede obtenu | |
| FR2515216A1 (fr) | Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques | |
| FR2546912A1 (fr) | Procede et dispositif d'elaboration d'un monocristal | |
| FR2589489A1 (fr) | Substrat de silicium monocristallin et ses procedes et appareil de fabrication | |
| EP2014802A1 (fr) | Procédé d'élaboration de plaquettes en matériau semi-conducteur par moulage et cristillisation dirigée | |
| US4904336A (en) | Method of manufacturing a single crystal of compound semiconductor and apparatus for the same | |
| JP3109659B2 (ja) | 結晶成長方法および装置 | |
| FR2487864A1 (fr) | Dispositif pour la croissance des monocristaux en groupe | |
| FR2569430A1 (fr) | Appareil pour extraire des monocristaux d'un bain de materiau semi-conducteur fondu contenu dans un creuset | |
| JP6719718B2 (ja) | Ｓｉインゴット結晶の製造方法及びその製造装置 | |
| EP1941553A1 (fr) | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication | |
| JPH08325099A (ja) | ＳｉＣ単結晶の成長方法 | |
| EP0775766A1 (fr) | Four de cristallisation pour matériau à faible conductivité thermique et/ou faible dureté | |
| EP1399606B1 (fr) | Dispositif de fabrication de cristaux d'alliage | |
| EP0214350B1 (fr) | Procédé de préparation d'un alliage polycristallin destiné à la réalisation de monocristaux par passage dans une zone de solvant | |
| RU2054495C1 (ru) | Способ выращивания монокристаллов арсенида галлия для изготовления подложек интегральных схем | |
| US5679151A (en) | Method for growing single crystal | |
| JP2005219996A (ja) | 単結晶育成装置 | |
| FR2560226A1 (fr) | Procede de preparation d'un alliage polycristallin destine a la realisation de monocristaux par passage dans une zone de solvant | |
| WO1994023883A1 (fr) | Procede et dispositif pour isoler de l'atmosphere une tete de soudage | |
| RU2534103C1 (ru) | Устройство для выращивания монокристаллов из расплава методом чохральского | |
| EP0981657B1 (fr) | Dispositif de solidification et de controle en continu de la croissance cristalline | |
| EP0178987A1 (fr) | Procédé de fabrication de cristaux de composés au moins ternaires par transfert d'une zone de solvant |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |