FR2487585A1 - Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede - Google Patents
Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede Download PDFInfo
- Publication number
- FR2487585A1 FR2487585A1 FR8016492A FR8016492A FR2487585A1 FR 2487585 A1 FR2487585 A1 FR 2487585A1 FR 8016492 A FR8016492 A FR 8016492A FR 8016492 A FR8016492 A FR 8016492A FR 2487585 A1 FR2487585 A1 FR 2487585A1
- Authority
- FR
- France
- Prior art keywords
- layer
- amorphous silicon
- metal
- silicon layer
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 3
- 230000008025 crystallization Effects 0.000 claims 3
- 239000000243 solution Substances 0.000 claims 2
- 229910052774 Proactinium Inorganic materials 0.000 claims 1
- 239000003929 acidic solution Substances 0.000 claims 1
- 238000001914 filtration Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 96
- 238000005984 hydrogenation reaction Methods 0.000 description 28
- 239000000758 substrate Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 241000238876 Acari Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000009089 cytolysis Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016492A FR2487585A1 (fr) | 1980-07-25 | 1980-07-25 | Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede |
| DE8181401156T DE3161283D1 (en) | 1980-07-25 | 1981-07-21 | Method of manufacturing an amorphous silicon layer, and electronic device applying this method |
| EP81401156A EP0045676B1 (fr) | 1980-07-25 | 1981-07-21 | Procédé de réalisation d'une couche en silicium amorphe, et dispositif électronique mettant en oeuvre ce procédé |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8016492A FR2487585A1 (fr) | 1980-07-25 | 1980-07-25 | Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2487585A1 true FR2487585A1 (fr) | 1982-01-29 |
| FR2487585B1 FR2487585B1 (enExample) | 1984-02-17 |
Family
ID=9244560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8016492A Granted FR2487585A1 (fr) | 1980-07-25 | 1980-07-25 | Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0045676B1 (enExample) |
| DE (1) | DE3161283D1 (enExample) |
| FR (1) | FR2487585A1 (enExample) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2366701A1 (fr) * | 1976-09-29 | 1978-04-28 | Rca Corp | Dispositif semi-conducteur, notamment pour la realisation de dispositifs photovoltaiques et redresseurs |
-
1980
- 1980-07-25 FR FR8016492A patent/FR2487585A1/fr active Granted
-
1981
- 1981-07-21 DE DE8181401156T patent/DE3161283D1/de not_active Expired
- 1981-07-21 EP EP81401156A patent/EP0045676B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2366701A1 (fr) * | 1976-09-29 | 1978-04-28 | Rca Corp | Dispositif semi-conducteur, notamment pour la realisation de dispositifs photovoltaiques et redresseurs |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/80 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3161283D1 (en) | 1983-12-01 |
| EP0045676B1 (fr) | 1983-10-26 |
| FR2487585B1 (enExample) | 1984-02-17 |
| EP0045676A1 (fr) | 1982-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0371582A1 (en) | Production of photoconductive device with ZnO electrode layer | |
| FR2490016A1 (fr) | Procede pour fabriquer un alliage amorphe photosensible, alliage obtenu par ce procede et dispositif de mise en oeuvre | |
| KR100659044B1 (ko) | 산화아연 박막을 가지는 태양전지 및 그 제조 방법 | |
| US5397737A (en) | Deposition of device quality low H content, amorphous silicon films | |
| FR2490018A1 (fr) | Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus | |
| EP1421630A2 (fr) | Procede de depot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat | |
| FR2500216A1 (fr) | Procede de fabrication de cellules solaires au silicium amorphe | |
| EP0042773B1 (fr) | Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique | |
| FR2490019A1 (fr) | Procede et dispositif pour augmenter l'intervalle de bandes d'alliages amorphes photosensibles et alliages obtenus | |
| JP5504565B2 (ja) | ダイヤモンド紫外線センサー素子とその製造方法、並びに紫外線センサー装置 | |
| US5230753A (en) | Photostable amorphous silicon-germanium alloys | |
| EP0045676B1 (fr) | Procédé de réalisation d'une couche en silicium amorphe, et dispositif électronique mettant en oeuvre ce procédé | |
| EP0024378B1 (fr) | Procédé de réalisation d'une couche contenant du silicium à structure hybride entre les formes amorphe et polycristalline, et pile solaire comprenant une telle couche | |
| JP4650491B2 (ja) | ダイヤモンド紫外光センサー | |
| US5278015A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| Pinarbasi et al. | Hydrogenated amorphous silicon films deposited by DC planar magnetron reactive sputtering | |
| FR2471671A1 (fr) | Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert | |
| FR2490017A1 (fr) | Procede de fabrication d'alliages de germanium amorphes photosensibles, dispositif pour la mise en oeuvre du procede et alliages obtenus | |
| US5152833A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| JP3142682B2 (ja) | 太陽電池製造方法及び製造装置 | |
| FR2511047A1 (fr) | Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires | |
| US5258207A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
| McKenzie | dc magnetron production of amorphous silicon solar cells | |
| JPS6258675B2 (enExample) | ||
| JPH0332019A (ja) | 非晶質半導体の薄膜 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |