DE3161283D1 - Method of manufacturing an amorphous silicon layer, and electronic device applying this method - Google Patents

Method of manufacturing an amorphous silicon layer, and electronic device applying this method

Info

Publication number
DE3161283D1
DE3161283D1 DE8181401156T DE3161283T DE3161283D1 DE 3161283 D1 DE3161283 D1 DE 3161283D1 DE 8181401156 T DE8181401156 T DE 8181401156T DE 3161283 T DE3161283 T DE 3161283T DE 3161283 D1 DE3161283 D1 DE 3161283D1
Authority
DE
Germany
Prior art keywords
manufacturing
electronic device
silicon layer
amorphous silicon
device applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181401156T
Other languages
German (de)
English (en)
Inventor
Dominique Dieumegard
Alain Friederich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3161283D1 publication Critical patent/DE3161283D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE8181401156T 1980-07-25 1981-07-21 Method of manufacturing an amorphous silicon layer, and electronic device applying this method Expired DE3161283D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016492A FR2487585A1 (fr) 1980-07-25 1980-07-25 Procede de realisation d'une couche en silicium amorphe et dispositif electronique mettant en oeuvre ce procede

Publications (1)

Publication Number Publication Date
DE3161283D1 true DE3161283D1 (en) 1983-12-01

Family

ID=9244560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181401156T Expired DE3161283D1 (en) 1980-07-25 1981-07-21 Method of manufacturing an amorphous silicon layer, and electronic device applying this method

Country Status (3)

Country Link
EP (1) EP0045676B1 (enExample)
DE (1) DE3161283D1 (enExample)
FR (1) FR2487585A1 (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication

Also Published As

Publication number Publication date
EP0045676B1 (fr) 1983-10-26
FR2487585B1 (enExample) 1984-02-17
FR2487585A1 (fr) 1982-01-29
EP0045676A1 (fr) 1982-02-10

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee