FR2485832A1 - Inverseur logique, et operateur a plusieurs sorties derive de cet inverseur, utilisant au moins un transistor a effet de champ a faible tension de seuil - Google Patents
Inverseur logique, et operateur a plusieurs sorties derive de cet inverseur, utilisant au moins un transistor a effet de champ a faible tension de seuil Download PDFInfo
- Publication number
- FR2485832A1 FR2485832A1 FR8013964A FR8013964A FR2485832A1 FR 2485832 A1 FR2485832 A1 FR 2485832A1 FR 8013964 A FR8013964 A FR 8013964A FR 8013964 A FR8013964 A FR 8013964A FR 2485832 A1 FR2485832 A1 FR 2485832A1
- Authority
- FR
- France
- Prior art keywords
- terminal
- branch
- logic
- input
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 13
- 239000008186 active pharmaceutical agent Substances 0.000 claims abstract description 10
- 229910052718 tin Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09421—Diode field-effect transistor logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013964A FR2485832A1 (fr) | 1980-06-24 | 1980-06-24 | Inverseur logique, et operateur a plusieurs sorties derive de cet inverseur, utilisant au moins un transistor a effet de champ a faible tension de seuil |
| DE8181400906T DE3165984D1 (en) | 1980-06-24 | 1981-06-05 | Logic inverter and operator with several outputs using at least one low-threshold field-effect transistor |
| EP81400906A EP0042777B1 (fr) | 1980-06-24 | 1981-06-05 | Inverseur logique et opérateur à plusieurs sorties dérivé de cet inverseur utilisant au moins un transistor à effet de champ à faible tension de seuil |
| US06/275,623 US4485316A (en) | 1980-06-24 | 1981-06-22 | Logic inverter, and a multi-output logic operator derived from this inverter, using at least two low-voltage-threshold field-effect transistors |
| NO812145A NO153870C (no) | 1980-06-24 | 1981-06-23 | Logisk inverterer, og logisk krets med flere utganger avledet fra denne inverterer, som bruker minst en felteffekttransistor med lav terskelspenning. |
| JP56098162A JPS5739626A (en) | 1980-06-24 | 1981-06-24 | Logic inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013964A FR2485832A1 (fr) | 1980-06-24 | 1980-06-24 | Inverseur logique, et operateur a plusieurs sorties derive de cet inverseur, utilisant au moins un transistor a effet de champ a faible tension de seuil |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2485832A1 true FR2485832A1 (fr) | 1981-12-31 |
| FR2485832B1 FR2485832B1 (OSRAM) | 1984-07-13 |
Family
ID=9243442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8013964A Granted FR2485832A1 (fr) | 1980-06-24 | 1980-06-24 | Inverseur logique, et operateur a plusieurs sorties derive de cet inverseur, utilisant au moins un transistor a effet de champ a faible tension de seuil |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4485316A (OSRAM) |
| EP (1) | EP0042777B1 (OSRAM) |
| JP (1) | JPS5739626A (OSRAM) |
| DE (1) | DE3165984D1 (OSRAM) |
| FR (1) | FR2485832A1 (OSRAM) |
| NO (1) | NO153870C (OSRAM) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400636A (en) * | 1980-12-05 | 1983-08-23 | Ibm Corporation | Threshold voltage tolerant logic |
| US4404480A (en) * | 1982-02-01 | 1983-09-13 | Sperry Corporation | High speed-low power gallium arsenide basic logic circuit |
| FR2528596A1 (fr) * | 1982-06-09 | 1983-12-16 | Labo Cent Telecommunicat | Cellule d'addition binaire a trois entrees a propagation rapide de la somme, realisee en circuit integre |
| JPS5999819A (ja) * | 1982-11-27 | 1984-06-08 | Hitachi Ltd | 入力インタ−フエイス回路 |
| JPS59191937A (ja) * | 1983-04-15 | 1984-10-31 | Nec Corp | 高速論理回路 |
| US4680484A (en) * | 1984-10-19 | 1987-07-14 | Trw Inc. | Wired-AND FET logic gate |
| US4713559A (en) * | 1985-04-29 | 1987-12-15 | Honeywell Inc. | Multiple input and multiple output or/and circuit |
| US4703205A (en) * | 1985-07-26 | 1987-10-27 | Rockwell International Corporation | Uncompensated and compensated gallium arsenide input receivers |
| US4725743A (en) * | 1986-04-25 | 1988-02-16 | International Business Machines Corporation | Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices |
| US4701646A (en) * | 1986-11-18 | 1987-10-20 | Northern Telecom Limited | Direct coupled FET logic using a photodiode for biasing or level-shifting |
| US4877976A (en) * | 1987-03-13 | 1989-10-31 | Gould Inc. | Cascade FET logic circuits |
| FR2612660B1 (fr) * | 1987-03-18 | 1990-10-19 | Hmida Hedi | Dispositif de calcul binaire |
| US4791322A (en) * | 1987-05-19 | 1988-12-13 | Gazelle Microcircuits, Inc. | TTL compatible input buffer |
| US4844563A (en) * | 1987-05-19 | 1989-07-04 | Gazelle Microcircuits, Inc. | Semiconductor integrated circuit compatible with compound standard logic signals |
| US4912745A (en) * | 1987-05-19 | 1990-03-27 | Gazelle Microcircuits, Inc. | Logic circuit connecting input and output signal lines |
| US4897809A (en) * | 1987-09-14 | 1990-01-30 | Hughes Aircraft Company | High speed adder |
| FR2653277A1 (fr) * | 1989-10-17 | 1991-04-19 | Thomson Composants Microondes | Circuit integre logique, a temps de basculement reglable. |
| FR2716586B1 (fr) * | 1994-02-23 | 1996-04-05 | Bull Sa | Porte ou-Exclusif intégrée dans un semi-conducteur III-V. |
| CN113353150B (zh) * | 2021-06-29 | 2023-06-16 | 三一重机有限公司 | 具有防限位件断裂损坏功能的底盘、方法及作业机械 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969632A (en) * | 1971-07-06 | 1976-07-13 | Thomson-Csf | Logic circuits-employing junction-type field-effect transistors |
| FR2264434B1 (OSRAM) * | 1974-03-12 | 1976-07-16 | Thomson Csf | |
| US4300064A (en) * | 1979-02-12 | 1981-11-10 | Rockwell International Corporation | Schottky diode FET logic integrated circuit |
| FR2449369A1 (fr) * | 1979-02-13 | 1980-09-12 | Thomson Csf | Circuit logique comportant une resistance saturable |
-
1980
- 1980-06-24 FR FR8013964A patent/FR2485832A1/fr active Granted
-
1981
- 1981-06-05 EP EP81400906A patent/EP0042777B1/fr not_active Expired
- 1981-06-05 DE DE8181400906T patent/DE3165984D1/de not_active Expired
- 1981-06-22 US US06/275,623 patent/US4485316A/en not_active Expired - Fee Related
- 1981-06-23 NO NO812145A patent/NO153870C/no unknown
- 1981-06-24 JP JP56098162A patent/JPS5739626A/ja active Pending
Non-Patent Citations (3)
| Title |
|---|
| EXBK/74/75 * |
| EXBK/79 * |
| EXBK/80 * |
Also Published As
| Publication number | Publication date |
|---|---|
| NO153870B (no) | 1986-02-24 |
| EP0042777B1 (fr) | 1984-09-12 |
| US4485316A (en) | 1984-11-27 |
| JPS5739626A (en) | 1982-03-04 |
| FR2485832B1 (OSRAM) | 1984-07-13 |
| EP0042777A1 (fr) | 1981-12-30 |
| NO153870C (no) | 1986-06-04 |
| DE3165984D1 (en) | 1984-10-18 |
| NO812145L (no) | 1981-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |