FR2484708A1 - Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm - Google Patents
Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm Download PDFInfo
- Publication number
- FR2484708A1 FR2484708A1 FR8013187A FR8013187A FR2484708A1 FR 2484708 A1 FR2484708 A1 FR 2484708A1 FR 8013187 A FR8013187 A FR 8013187A FR 8013187 A FR8013187 A FR 8013187A FR 2484708 A1 FR2484708 A1 FR 2484708A1
- Authority
- FR
- France
- Prior art keywords
- range
- radiation
- sensitive surface
- detector
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 230000007774 longterm Effects 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 102220357476 c.34A>T Human genes 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013187A FR2484708A1 (fr) | 1980-06-13 | 1980-06-13 | Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm |
| US06/271,953 US4420684A (en) | 1980-06-13 | 1981-06-09 | Large-surface fast photodetector sensitive in the 0.8-1.1 μm range |
| EP81400911A EP0042326A1 (fr) | 1980-06-13 | 1981-06-09 | Photodétecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 micro-m. |
| JP8972681A JPS5726485A (en) | 1980-06-13 | 1981-06-12 | Large surface high speed photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013187A FR2484708A1 (fr) | 1980-06-13 | 1980-06-13 | Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2484708A1 true FR2484708A1 (fr) | 1981-12-18 |
| FR2484708B1 FR2484708B1 (enExample) | 1983-12-16 |
Family
ID=9243078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8013187A Granted FR2484708A1 (fr) | 1980-06-13 | 1980-06-13 | Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4420684A (enExample) |
| EP (1) | EP0042326A1 (enExample) |
| JP (1) | JPS5726485A (enExample) |
| FR (1) | FR2484708A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134277A (en) * | 1983-11-07 | 1992-07-28 | Australian Meat And Live-Stock Corporation | Remote data transfer system with ambient light insensitive circuitry |
| US7235819B2 (en) | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
| US5677538A (en) * | 1995-07-07 | 1997-10-14 | Trustees Of Boston University | Photodetectors using III-V nitrides |
| SE0003102L (sv) * | 2000-09-01 | 2002-03-02 | Imego Ab | Positionskänslig detektor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1561967A (enExample) * | 1967-11-30 | 1969-04-04 | ||
| FR1563710A (enExample) * | 1967-11-30 | 1969-04-18 | ||
| FR2362412A1 (fr) * | 1976-08-20 | 1978-03-17 | Siemens Ag | Filtres pour photodetecteurs |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3261726A (en) * | 1961-10-09 | 1966-07-19 | Monsanto Co | Production of epitaxial films |
| US3218204A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound |
| US3364066A (en) * | 1964-06-30 | 1968-01-16 | Barnes Eng Co | Black pigment for the blackening of infrared radiation detectors |
| US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
| US4228349A (en) * | 1978-08-28 | 1980-10-14 | Rca Corporation | III-V Direct-bandgap semiconductor optical filter |
-
1980
- 1980-06-13 FR FR8013187A patent/FR2484708A1/fr active Granted
-
1981
- 1981-06-09 US US06/271,953 patent/US4420684A/en not_active Expired - Fee Related
- 1981-06-09 EP EP81400911A patent/EP0042326A1/fr not_active Ceased
- 1981-06-12 JP JP8972681A patent/JPS5726485A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1561967A (enExample) * | 1967-11-30 | 1969-04-04 | ||
| FR1563710A (enExample) * | 1967-11-30 | 1969-04-18 | ||
| FR2362412A1 (fr) * | 1976-08-20 | 1978-03-17 | Siemens Ag | Filtres pour photodetecteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| US4420684A (en) | 1983-12-13 |
| EP0042326A1 (fr) | 1981-12-23 |
| FR2484708B1 (enExample) | 1983-12-16 |
| JPS5726485A (en) | 1982-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3503192B1 (fr) | Dispositif d'acquisition d'une image 2d et d'une image de profondeur d'une scène | |
| JPS5980978A (ja) | 光導電形赤外線検出器 | |
| EP2732473A1 (fr) | Matrice de photodiodes ingaas | |
| FR2940522A1 (fr) | Photodetecteur comprenant une region semiconductrice tres mince | |
| JPH06188439A (ja) | 広帯域反射防止コーティングを備えたアンチモン化インジウム光検出装置 | |
| FR2938374A1 (fr) | Photodetecteur a gain interne et detecteur comportant une matrice de tels photodetecteurs | |
| EP2801117B1 (fr) | Structure semiconductrice, dispositif comportant une telle structure et procédé de fabrication d'une structure semiconductrice | |
| FR2954996A1 (fr) | Photodiode, reseau de photodiodes et procede de passivation d'une photodiode de groupes ii-vi | |
| WO2013189997A1 (fr) | Structure semiconductrice comportant une zone absorbante placee dans une cavite focalisante | |
| FR2733858A1 (fr) | Convertisseur de lumiere d'infrarouge lointain au proche infrarouge | |
| EP2276072B1 (fr) | Element photodetecteur | |
| FR2572588A1 (fr) | Photodetecteur integrable de facon monolithique | |
| FR2484708A1 (fr) | Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm | |
| RU2488916C1 (ru) | Полупроводниковый приемник инфракрасного излучения | |
| EP3703138B1 (fr) | Structure de détection de rayonnement électromagnétique à haute efficacité d'absorption et un procédé de fabrication d'une telle structure | |
| EP0302820B1 (fr) | Détecteur de particules ionisantes | |
| EP1432044A1 (fr) | Photodiode à filtre en polysilicium intégré | |
| FR2653937A1 (fr) | Dispositif photodetecteur. | |
| EP0024970A2 (fr) | Procédé de fabrication d'un dispositif photodétecteur à semiconducteur | |
| EP2382672B1 (fr) | Procédé de fabrication d'une photodiode et photodiode et détecteur de rayonnement electromagnétique correspondants | |
| EP0060743B1 (fr) | Photodétecteur sensible dans l'infra-rouge proche | |
| FR2471053A1 (fr) | Dispositif semi-conducteur en immersion optique, notamment detecteur photovoltaique et son procede de fabrication | |
| FR3054893A1 (fr) | Dispositif de filtrage destine a detecter, dans un signal optique, au moins une longueur d'onde emise par un laser et une bande de longueurs d'ondes infrarouges | |
| EP3693997B1 (fr) | Matrice de photo-détecteurs à barrière avec pixellisation par déplétions locales | |
| FR2614135A1 (fr) | Photodiode hgcdte a reponse rapide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DL | Decision of the director general to leave to make available licences of right | ||
| TP | Transmission of property | ||
| ST | Notification of lapse |