JPS5726485A - Large surface high speed photoelectric detector - Google Patents
Large surface high speed photoelectric detectorInfo
- Publication number
- JPS5726485A JPS5726485A JP8972681A JP8972681A JPS5726485A JP S5726485 A JPS5726485 A JP S5726485A JP 8972681 A JP8972681 A JP 8972681A JP 8972681 A JP8972681 A JP 8972681A JP S5726485 A JPS5726485 A JP S5726485A
- Authority
- JP
- Japan
- Prior art keywords
- high speed
- large surface
- photoelectric detector
- surface high
- speed photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8013187A FR2484708A1 (fr) | 1980-06-13 | 1980-06-13 | Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5726485A true JPS5726485A (en) | 1982-02-12 |
Family
ID=9243078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8972681A Pending JPS5726485A (en) | 1980-06-13 | 1981-06-12 | Large surface high speed photoelectric detector |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4420684A (enExample) |
| EP (1) | EP0042326A1 (enExample) |
| JP (1) | JPS5726485A (enExample) |
| FR (1) | FR2484708A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134277A (en) * | 1983-11-07 | 1992-07-28 | Australian Meat And Live-Stock Corporation | Remote data transfer system with ambient light insensitive circuitry |
| US7235819B2 (en) | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
| US5677538A (en) * | 1995-07-07 | 1997-10-14 | Trustees Of Boston University | Photodetectors using III-V nitrides |
| SE0003102L (sv) * | 2000-09-01 | 2002-03-02 | Imego Ab | Positionskänslig detektor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3261726A (en) * | 1961-10-09 | 1966-07-19 | Monsanto Co | Production of epitaxial films |
| US3218204A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound |
| US3364066A (en) * | 1964-06-30 | 1968-01-16 | Barnes Eng Co | Black pigment for the blackening of infrared radiation detectors |
| FR1561967A (enExample) * | 1967-11-30 | 1969-04-04 | ||
| FR1563710A (enExample) * | 1967-11-30 | 1969-04-18 | ||
| US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
| DE2637616A1 (de) * | 1976-08-20 | 1978-02-23 | Siemens Ag | Filter fuer fotodetektoren |
| US4228349A (en) * | 1978-08-28 | 1980-10-14 | Rca Corporation | III-V Direct-bandgap semiconductor optical filter |
-
1980
- 1980-06-13 FR FR8013187A patent/FR2484708A1/fr active Granted
-
1981
- 1981-06-09 US US06/271,953 patent/US4420684A/en not_active Expired - Fee Related
- 1981-06-09 EP EP81400911A patent/EP0042326A1/fr not_active Ceased
- 1981-06-12 JP JP8972681A patent/JPS5726485A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4420684A (en) | 1983-12-13 |
| FR2484708A1 (fr) | 1981-12-18 |
| EP0042326A1 (fr) | 1981-12-23 |
| FR2484708B1 (enExample) | 1983-12-16 |
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