FR2480505B1 - - Google Patents
Info
- Publication number
- FR2480505B1 FR2480505B1 FR8008277A FR8008277A FR2480505B1 FR 2480505 B1 FR2480505 B1 FR 2480505B1 FR 8008277 A FR8008277 A FR 8008277A FR 8008277 A FR8008277 A FR 8008277A FR 2480505 B1 FR2480505 B1 FR 2480505B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/343—Gate regions of field-effect devices having PN junction gates
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- H10D64/0113—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
-
- H10P50/644—
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8008277A FR2480505A1 (fr) | 1980-04-14 | 1980-04-14 | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
| EP81400540A EP0038248A1 (fr) | 1980-04-14 | 1981-04-03 | Transistor à effet de champ à jonction de puissance à fonctionnement vertical, et procédé de fabrication |
| JP5513981A JPS56158483A (en) | 1980-04-14 | 1981-04-14 | Field effect power transistor and method of manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8008277A FR2480505A1 (fr) | 1980-04-14 | 1980-04-14 | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2480505A1 FR2480505A1 (fr) | 1981-10-16 |
| FR2480505B1 true FR2480505B1 (enExample) | 1984-05-25 |
Family
ID=9240815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8008277A Granted FR2480505A1 (fr) | 1980-04-14 | 1980-04-14 | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0038248A1 (enExample) |
| JP (1) | JPS56158483A (enExample) |
| FR (1) | FR2480505A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0059264A1 (en) * | 1981-03-02 | 1982-09-08 | Rockwell International Corporation | NPN Type lateral transistor with minimal substrate operation interference and method for producing same |
| CH670173A5 (enExample) * | 1986-06-03 | 1989-05-12 | Bbc Brown Boveri & Cie | |
| JP2001118927A (ja) * | 1999-10-22 | 2001-04-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49134282A (enExample) * | 1973-04-25 | 1974-12-24 | ||
| US4181542A (en) * | 1976-10-25 | 1980-01-01 | Nippon Gakki Seizo Kabushiki Kaisha | Method of manufacturing junction field effect transistors |
| NL191525C (nl) * | 1977-02-02 | 1995-08-21 | Shinkokai Zaidan Hojin Handot | Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. |
| DE2807181C2 (de) * | 1977-02-21 | 1985-11-28 | Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi | Halbleiterspeichervorrichtung |
| JPS53147481A (en) * | 1977-05-27 | 1978-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and production of the same |
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| GB2026237A (en) * | 1978-07-19 | 1980-01-30 | Texas Instruments Ltd | Junction gate field effect transistors |
| US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
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1980
- 1980-04-14 FR FR8008277A patent/FR2480505A1/fr active Granted
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1981
- 1981-04-03 EP EP81400540A patent/EP0038248A1/fr not_active Withdrawn
- 1981-04-14 JP JP5513981A patent/JPS56158483A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0038248A1 (fr) | 1981-10-21 |
| JPS56158483A (en) | 1981-12-07 |
| FR2480505A1 (fr) | 1981-10-16 |