FR2476944A1 - Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais - Google Patents

Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais Download PDF

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Publication number
FR2476944A1
FR2476944A1 FR8003814A FR8003814A FR2476944A1 FR 2476944 A1 FR2476944 A1 FR 2476944A1 FR 8003814 A FR8003814 A FR 8003814A FR 8003814 A FR8003814 A FR 8003814A FR 2476944 A1 FR2476944 A1 FR 2476944A1
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FR
France
Prior art keywords
layer
substrate
relay
diode
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003814A
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English (en)
French (fr)
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FR2476944B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8003814A priority Critical patent/FR2476944A1/fr
Priority to US06/234,005 priority patent/US4412235A/en
Publication of FR2476944A1 publication Critical patent/FR2476944A1/fr
Application granted granted Critical
Publication of FR2476944B1 publication Critical patent/FR2476944B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/526—Optical switching systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electronic Switches (AREA)
FR8003814A 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais Granted FR2476944A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR8003814A FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
US06/234,005 US4412235A (en) 1980-02-21 1981-02-12 Integrated opto-electronic relay using a semiconductor with persistent photoconductivity and a matrix of such relays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8003814A FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais

Publications (2)

Publication Number Publication Date
FR2476944A1 true FR2476944A1 (fr) 1981-08-28
FR2476944B1 FR2476944B1 (OSRAM) 1982-01-15

Family

ID=9238814

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003814A Granted FR2476944A1 (fr) 1980-02-21 1980-02-21 Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais

Country Status (2)

Country Link
US (1) US4412235A (OSRAM)
FR (1) FR2476944A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678923A3 (en) * 1994-04-08 1996-02-28 Nec Corp Optoelectronic devices with stable photoconductivity.

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3713067A1 (de) * 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement und verfahren zu dessen herstellung
US5072122A (en) * 1990-10-15 1991-12-10 Kansas State University Research Foundation Charge storage image device using persistent photoconductivity crystals
US6363097B1 (en) * 1998-09-18 2002-03-26 Nec Corporation Semiconductor laser with a rewritable wavelength stabilizer
US6229135B1 (en) * 1999-07-02 2001-05-08 Cosmo Electronics Corp. Optoelectronic IC relay with observing hole
GB2400506A (en) * 2003-03-03 2004-10-13 Gareth Monkman A binary or analogue opto-isolator using an undoped GaAs photoconductor
US7085667B2 (en) * 2003-05-19 2006-08-01 Analog Microelectronics, Inc. System and method of heating up a semiconductor device in a standard test environment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112985A (en) 1966-08-09 1968-05-08 Standard Telephones Cables Ltd Improvements in or relating to crosspoint switches
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
FR2399740A1 (fr) * 1977-08-02 1979-03-02 Thomson Csf Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678923A3 (en) * 1994-04-08 1996-02-28 Nec Corp Optoelectronic devices with stable photoconductivity.

Also Published As

Publication number Publication date
FR2476944B1 (OSRAM) 1982-01-15
US4412235A (en) 1983-10-25

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