FR2463512A1 - Perfectionnements aux dispositifs a jonctions tunnel et aux procedes de fabrication de telles jonctions - Google Patents
Perfectionnements aux dispositifs a jonctions tunnel et aux procedes de fabrication de telles jonctions Download PDFInfo
- Publication number
- FR2463512A1 FR2463512A1 FR7913869A FR7913869A FR2463512A1 FR 2463512 A1 FR2463512 A1 FR 2463512A1 FR 7913869 A FR7913869 A FR 7913869A FR 7913869 A FR7913869 A FR 7913869A FR 2463512 A1 FR2463512 A1 FR 2463512A1
- Authority
- FR
- France
- Prior art keywords
- superconductor
- strip
- insulating
- barrier
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 230000004888 barrier function Effects 0.000 title claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000005668 Josephson effect Effects 0.000 claims abstract description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 3
- 230000015654 memory Effects 0.000 claims abstract description 3
- 239000002887 superconductor Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 1
- 239000010957 pewter Substances 0.000 claims 1
- 229910000498 pewter Inorganic materials 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 230000005672 electromagnetic field Effects 0.000 abstract description 4
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VVADDWYOHFWHBJ-UHFFFAOYSA-N [Pb+2].[O-2].[Nb+5].[Nb+5].[O-2].[O-2].[O-2].[O-2].[O-2] Chemical compound [Pb+2].[O-2].[Nb+5].[Nb+5].[O-2].[O-2].[O-2].[O-2].[O-2] VVADDWYOHFWHBJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7913869A FR2463512A1 (fr) | 1979-05-30 | 1979-05-30 | Perfectionnements aux dispositifs a jonctions tunnel et aux procedes de fabrication de telles jonctions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7913869A FR2463512A1 (fr) | 1979-05-30 | 1979-05-30 | Perfectionnements aux dispositifs a jonctions tunnel et aux procedes de fabrication de telles jonctions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2463512A1 true FR2463512A1 (fr) | 1981-02-20 |
| FR2463512B1 FR2463512B1 (enExample) | 1983-02-25 |
Family
ID=9226042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7913869A Granted FR2463512A1 (fr) | 1979-05-30 | 1979-05-30 | Perfectionnements aux dispositifs a jonctions tunnel et aux procedes de fabrication de telles jonctions |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2463512A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4586062A (en) * | 1982-02-23 | 1986-04-29 | Centre National De La Recherche Scientifique | Microcircuits formed from substrates of organic quasiunidimensional conductors |
| EP0688848A1 (fr) | 1994-06-22 | 1995-12-27 | Rhone-Poulenc Chimie | Système concentré à base d'un agent épaississant, ledit système étant dispersable et épaississable par dilution en milieu aqueux |
| EP0691315A1 (fr) | 1994-07-08 | 1996-01-10 | Rhone-Poulenc Chimie | Procédé de préparation de mélanges aqueux argileux pompables |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1593108A (enExample) * | 1967-11-24 | 1970-05-25 | ||
| DE2739156A1 (de) * | 1977-08-31 | 1979-03-15 | Licentia Gmbh | Schaltungsanordnung mit josephson- elementen |
-
1979
- 1979-05-30 FR FR7913869A patent/FR2463512A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1593108A (enExample) * | 1967-11-24 | 1970-05-25 | ||
| DE2739156A1 (de) * | 1977-08-31 | 1979-03-15 | Licentia Gmbh | Schaltungsanordnung mit josephson- elementen |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4586062A (en) * | 1982-02-23 | 1986-04-29 | Centre National De La Recherche Scientifique | Microcircuits formed from substrates of organic quasiunidimensional conductors |
| EP0688848A1 (fr) | 1994-06-22 | 1995-12-27 | Rhone-Poulenc Chimie | Système concentré à base d'un agent épaississant, ledit système étant dispersable et épaississable par dilution en milieu aqueux |
| EP0691315A1 (fr) | 1994-07-08 | 1996-01-10 | Rhone-Poulenc Chimie | Procédé de préparation de mélanges aqueux argileux pompables |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2463512B1 (enExample) | 1983-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |