FR2460544A1 - Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues - Google Patents

Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues Download PDF

Info

Publication number
FR2460544A1
FR2460544A1 FR7916968A FR7916968A FR2460544A1 FR 2460544 A1 FR2460544 A1 FR 2460544A1 FR 7916968 A FR7916968 A FR 7916968A FR 7916968 A FR7916968 A FR 7916968A FR 2460544 A1 FR2460544 A1 FR 2460544A1
Authority
FR
France
Prior art keywords
photopiles
solar
grid
mfr
angstroms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7916968A
Other languages
English (en)
French (fr)
Other versions
FR2460544B1 (https=
Inventor
Emmanuel Fabre
Yvon Salles
Eric Fogarassy
Roland Stuck
Jean-Claude Muller
Dominique Salles
Paul Siffert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7916968A priority Critical patent/FR2460544A1/fr
Publication of FR2460544A1 publication Critical patent/FR2460544A1/fr
Application granted granted Critical
Publication of FR2460544B1 publication Critical patent/FR2460544B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
FR7916968A 1979-06-29 1979-06-29 Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues Granted FR2460544A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7916968A FR2460544A1 (fr) 1979-06-29 1979-06-29 Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7916968A FR2460544A1 (fr) 1979-06-29 1979-06-29 Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues

Publications (2)

Publication Number Publication Date
FR2460544A1 true FR2460544A1 (fr) 1981-01-23
FR2460544B1 FR2460544B1 (https=) 1983-01-14

Family

ID=9227341

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916968A Granted FR2460544A1 (fr) 1979-06-29 1979-06-29 Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues

Country Status (1)

Country Link
FR (1) FR2460544A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing

Also Published As

Publication number Publication date
FR2460544B1 (https=) 1983-01-14

Similar Documents

Publication Publication Date Title
US7964789B2 (en) Germanium solar cell and method for the production thereof
Zaidi Introductory Chapter: Introduction to Photovoltaic
EP2724385B1 (fr) Procede de traitement d'une cellule photovoltaïque a heterojonction
EP4004986B1 (fr) Procédé de traitement d'un empilement obtenu lors de la fabrication d'une cellule photovoltaïque a hétérojonction
EP2513978B1 (fr) Cellule photovoltaïque a heterojonction a contact arriere
US20120291859A1 (en) Multi-Junction Semiconductor Photovoltaic Apparatus and Methods
FR2722612A1 (fr) Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
FR3136112A3 (fr) cellule solaire et procédé de production de celle–ci, module photovoltaïque
FR2491261A1 (fr) Pile solaire et son procede de fabrication
KR20020079952A (ko) 광 에너지 변환 장치
WO2022023221A1 (fr) Procédé de traitement d'un précurseur de cellule photovoltaïque à hétérojonction
CN105679653B (zh) 硫硅半导体合金叠层太阳能电池的制作方法
EP2965350A1 (fr) Substrat semi-conducteur monolithique à base de silicium, divisé en sous-cellules
FR2943180A1 (fr) Procede de formation d'une cellule photovoltaique avec dopage par laser
FR2460544A1 (fr) Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues
US4311870A (en) Efficiency of silicon solar cells containing chromium
EP4186110A1 (fr) Procédé de traitement par balayage d'une cellule photovoltaïque a hétérojonction
KR101013432B1 (ko) 박막 태양전지 제조방법
EP3660928B1 (fr) Procédé de fabrication de cellules photovoltaiques
FR3112892A1 (fr) Procédé de traitement par balayage interrompu d’une cellule photovoltaïque a hétérojonction
FR3003089A1 (fr) Plaquette de silicium monolithique a multi-jonctions p/n verticales.
EP3671864A1 (fr) Procede de fabrication d'une jonction a effet tunnel inter-bandes
US20230178673A1 (en) Design and Fabrication Method of Hetero-structured Solar Cell Using Non-Crystalline a-Si/poly-Si
EP0033429A2 (fr) Cellule photovoltaique applicable à la fabrication de piles solaires
EP3242335A1 (fr) Procédé de fabrication d'une cellule photovoltaïque à hétérojonction

Legal Events

Date Code Title Description
CL Concession to grant licences
CD Change of name or company name
ST Notification of lapse